Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs

Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Hot-carrier degraded SiGe/Si-hetero-pMOSFETs have been characterized. The degradation of transconductance and the threshold voltage shift after hot-carrier stress are discussed based upon the changes in the densities of SiGe/Si hetero-interface traps and gate-oxide interface traps, which have been evaluated using a unique low-temperature charge-pumping method. It is concluded that the increase in the maximum transconductance and the threshold-voltage shift after a hot carrier stress are mainly due to trapped electrons in the gate oxide near the drain, and the decrease in transconductance, dependent on the gate voltage, is considered to be due to generated SiGe/Si hetero-interface traps.

Original languageEnglish
Pages (from-to)326-328
Number of pages3
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Jun 5


  • Hot carrier effects
  • Interfaces
  • Metal oxide semiconductor (MOS) devices
  • Silicon germanium


Dive into the research topics of 'Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs'. Together they form a unique fingerprint.

Cite this