Characterization of Hydrogen and Oxygen Atoms in SiN Films Produced by Plasma-Enhanced Reactive Sputtering

Iwao Sugimoto; Keiichi Yanagisawa; Hiroki Kuwano; Satoko Nakano; Akio Tago

doi:10.1116/1.578957

Characterization of Hydrogen and Oxygen Atoms in SiN Films Produced by Plasma-Enhanced Reactive Sputtering

Iwao Sugimoto, Keiichi Yanagisawa, Hiroki Kuwano, Satoko Nakano, Akio Tago

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Silicon nitride films are prepared by helium-excited magnetron radio-frequency sputtering. Excitation energy transfer from He to N 2 and existence of hydrogenation and oxidation source (0+ and OH-) in the plasmas are confirmed by optical emission spectroscopy. The structure and characteristics of the resultant films depend on the gas pressure during sputtering: Films produced at pressures above 5 Pa are etched rapidly in a buffered hydrogen fluoride solution and have low refractive indices because their structure is coarse and rich in oxygen and hydrogen or both.

Original language	English
Pages (from-to)	2859-2866
Number of pages	8
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	12
Issue number	5
DOIs	https://doi.org/10.1116/1.578957
Publication status	Published - 1994 Sept
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "Silicon nitride films are prepared by helium-excited magnetron radio-frequency sputtering. Excitation energy transfer from He to N 2 and existence of hydrogenation and oxidation source (0+ and OH-) in the plasmas are confirmed by optical emission spectroscopy. The structure and characteristics of the resultant films depend on the gas pressure during sputtering: Films produced at pressures above 5 Pa are etched rapidly in a buffered hydrogen fluoride solution and have low refractive indices because their structure is coarse and rich in oxygen and hydrogen or both.",

author = "Iwao Sugimoto and Keiichi Yanagisawa and Hiroki Kuwano and Satoko Nakano and Akio Tago",

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T1 - Characterization of Hydrogen and Oxygen Atoms in SiN Films Produced by Plasma-Enhanced Reactive Sputtering

AU - Sugimoto, Iwao

AU - Yanagisawa, Keiichi

AU - Kuwano, Hiroki

AU - Nakano, Satoko

AU - Tago, Akio

PY - 1994/9

Y1 - 1994/9

N2 - Silicon nitride films are prepared by helium-excited magnetron radio-frequency sputtering. Excitation energy transfer from He to N 2 and existence of hydrogenation and oxidation source (0+ and OH-) in the plasmas are confirmed by optical emission spectroscopy. The structure and characteristics of the resultant films depend on the gas pressure during sputtering: Films produced at pressures above 5 Pa are etched rapidly in a buffered hydrogen fluoride solution and have low refractive indices because their structure is coarse and rich in oxygen and hydrogen or both.

AB - Silicon nitride films are prepared by helium-excited magnetron radio-frequency sputtering. Excitation energy transfer from He to N 2 and existence of hydrogenation and oxidation source (0+ and OH-) in the plasmas are confirmed by optical emission spectroscopy. The structure and characteristics of the resultant films depend on the gas pressure during sputtering: Films produced at pressures above 5 Pa are etched rapidly in a buffered hydrogen fluoride solution and have low refractive indices because their structure is coarse and rich in oxygen and hydrogen or both.

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Characterization of Hydrogen and Oxygen Atoms in SiN Films Produced by Plasma-Enhanced Reactive Sputtering

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