Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

M. M. Uddin; H. W. Liu; K. F. Yang; K. Nagase; T. D. Mishima; M. B. Santos; Y. Hirayama

doi:10.1063/1.4769225

Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

M. M. Uddin, H. W. Liu, K. F. Yang, K. Nagase, T. D. Mishima, M. B. Santos, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

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12 Citations (Scopus)

Abstract

We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al₂O₃ dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (V_g). A good interface between Al₂O₃ and the top InSb layer ensures that the parallel channel is depleted at negative V_g and the density of two-dimensional electrons in the QW is tuned by V_g with a large ratio of 6.5 × 10¹⁴ m^-2 V^-1 but saturates at large negative V_g. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrödinger-Poisson simulation and two-carrier model.

Original language	English
Article number	233503
Journal	Applied Physics Letters
Volume	101
Issue number	23
DOIs	https://doi.org/10.1063/1.4769225
Publication status	Published - 2012 Dec 3

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title = "Characterization of InSb quantum wells with atomic layer deposited gate dielectrics",

abstract = "We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5 × 1014 m-2 V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schr{\"o}dinger-Poisson simulation and two-carrier model.",

author = "Uddin, {M. M.} and Liu, {H. W.} and Yang, {K. F.} and K. Nagase and Mishima, {T. D.} and Santos, {M. B.} and Y. Hirayama",

note = "Funding Information: The authors acknowledge K. Hashimoto for helpful discussions on AFM measurements. M.M.U. would like to thank IIARE, Tohoku University for S-SDC fellowship. H.W.L. thanks the Program for New Century Excellent Talents of the University in China.",

year = "2012",

month = dec,

day = "3",

doi = "10.1063/1.4769225",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

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TY - JOUR

T1 - Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

AU - Uddin, M. M.

AU - Liu, H. W.

AU - Yang, K. F.

AU - Nagase, K.

AU - Mishima, T. D.

AU - Santos, M. B.

AU - Hirayama, Y.

N1 - Funding Information: The authors acknowledge K. Hashimoto for helpful discussions on AFM measurements. M.M.U. would like to thank IIARE, Tohoku University for S-SDC fellowship. H.W.L. thanks the Program for New Century Excellent Talents of the University in China.

PY - 2012/12/3

Y1 - 2012/12/3

N2 - We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5 × 1014 m-2 V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrödinger-Poisson simulation and two-carrier model.

AB - We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5 × 1014 m-2 V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrödinger-Poisson simulation and two-carrier model.

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DO - 10.1063/1.4769225

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SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233503

ER -

Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

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