CHARACTERIZATION OF INTERFACES FORMED BY INTERRUPTED OMVPE GROWTH.

Hideki Hasegawa; Eiji Ikeda; Hideo Ohno

CHARACTERIZATION OF INTERFACES FORMED BY INTERRUPTED OMVPE GROWTH.

Hideki Hasegawa, Eiji Ikeda, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Properties of GaAs and InGaAs/GaAs epitaxial interfaces formed by interrupted OMPVE regrowth are studied using C-V, I-V, DLTS, cross-sectional TEM and RBS techniques. Various types of anomalous depletion and accumulation carrier concentration profiles are observed at regrown interfaces prepared under various growth and processing conditions. Based on experiments, a new generalized model for regrowth epitaxial interfaces is proposed which involves formation of gap state continuum as well as adsorption enhanced incorporation of shallow donor/acceptor impurity atoms. The introduction of gap state continuum is explained by the recently proposed disorder induced gap state (DIGS) model in which crystalline disorder within a few monolayers of the regrown interface region gives rise to state continuum, leading to the observed anomalous carrier profiles.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Sayan D. Mukherjee
Publisher	SPIE
Pages	250-261
Number of pages	12
ISBN (Print)	089252832X
Publication status	Published - 1987
Externally published	Yes

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	797
ISSN (Print)	0277-786X

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

CHARACTERIZATION OF INTERFACES FORMED BY INTERRUPTED OMVPE GROWTH. / Hasegawa, Hideki; Ikeda, Eiji; Ohno, Hideo.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Sayan D. Mukherjee. SPIE, 1987. p. 250-261 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 797).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{719e1860db9c4f78bba8071998fe66ae,

title = "CHARACTERIZATION OF INTERFACES FORMED BY INTERRUPTED OMVPE GROWTH.",

abstract = "Properties of GaAs and InGaAs/GaAs epitaxial interfaces formed by interrupted OMPVE regrowth are studied using C-V, I-V, DLTS, cross-sectional TEM and RBS techniques. Various types of anomalous depletion and accumulation carrier concentration profiles are observed at regrown interfaces prepared under various growth and processing conditions. Based on experiments, a new generalized model for regrowth epitaxial interfaces is proposed which involves formation of gap state continuum as well as adsorption enhanced incorporation of shallow donor/acceptor impurity atoms. The introduction of gap state continuum is explained by the recently proposed disorder induced gap state (DIGS) model in which crystalline disorder within a few monolayers of the regrown interface region gives rise to state continuum, leading to the observed anomalous carrier profiles.",

author = "Hideki Hasegawa and Eiji Ikeda and Hideo Ohno",

year = "1987",

language = "English",

isbn = "089252832X",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

pages = "250--261",

editor = "Mukherjee, {Sayan D.}",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - CHARACTERIZATION OF INTERFACES FORMED BY INTERRUPTED OMVPE GROWTH.

AU - Hasegawa, Hideki

AU - Ikeda, Eiji

AU - Ohno, Hideo

PY - 1987

Y1 - 1987

N2 - Properties of GaAs and InGaAs/GaAs epitaxial interfaces formed by interrupted OMPVE regrowth are studied using C-V, I-V, DLTS, cross-sectional TEM and RBS techniques. Various types of anomalous depletion and accumulation carrier concentration profiles are observed at regrown interfaces prepared under various growth and processing conditions. Based on experiments, a new generalized model for regrowth epitaxial interfaces is proposed which involves formation of gap state continuum as well as adsorption enhanced incorporation of shallow donor/acceptor impurity atoms. The introduction of gap state continuum is explained by the recently proposed disorder induced gap state (DIGS) model in which crystalline disorder within a few monolayers of the regrown interface region gives rise to state continuum, leading to the observed anomalous carrier profiles.

AB - Properties of GaAs and InGaAs/GaAs epitaxial interfaces formed by interrupted OMPVE regrowth are studied using C-V, I-V, DLTS, cross-sectional TEM and RBS techniques. Various types of anomalous depletion and accumulation carrier concentration profiles are observed at regrown interfaces prepared under various growth and processing conditions. Based on experiments, a new generalized model for regrowth epitaxial interfaces is proposed which involves formation of gap state continuum as well as adsorption enhanced incorporation of shallow donor/acceptor impurity atoms. The introduction of gap state continuum is explained by the recently proposed disorder induced gap state (DIGS) model in which crystalline disorder within a few monolayers of the regrown interface region gives rise to state continuum, leading to the observed anomalous carrier profiles.

UR - http://www.scopus.com/inward/record.url?scp=0023543954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023543954&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023543954

SN - 089252832X

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 250

EP - 261

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Mukherjee, Sayan D.

PB - SPIE

ER -

CHARACTERIZATION OF INTERFACES FORMED BY INTERRUPTED OMVPE GROWTH.

Abstract

Publication series

ASJC Scopus subject areas

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