Characterization of laser annealed InP with ellipsometry and Hall effect measurement

R. Fremunt; Y. Hirayama; F. Arai; T. Sugano

doi:10.1063/1.94827

Characterization of laser annealed InP with ellipsometry and Hall effect measurement

R. Fremunt, Y. Hirayama, F. Arai, T. Sugano

Center for Science and Innovation in Spintronics (CSIS)

The University of Tokyo

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Indium phosphide layers into which sulphur ions were implanted at room temperature in the dose range of 5×10¹³- 1×10¹⁵ cm^-2 were annealed with continuous wave (cw) Nd:yttrium aluminum garnet (YAG) laser beam in double scan with the power density from 1.8 to 5.4×10⁴ W cm ^-2 at a dwell time of 3.6 ms. Following annealing the samples were characterized by ellipsometry and the electrical activity of implanted ions was assessed by Van der Pauw type Hall measurements. At high doses, electrical activity over 20% and electron mobility of about 1500 cm ²/V s were obtained, but electrical properties were poor at low doses. It is assumed that the effect of activated impurities is compensated by defects, which were induced by cw Nd:YAG laser annealing, to a large extent.

Original language	English
Pages (from-to)	530-532
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	5
DOIs	https://doi.org/10.1063/1.94827
Publication status	Published - 1984

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title = "Characterization of laser annealed InP with ellipsometry and Hall effect measurement",

abstract = "Indium phosphide layers into which sulphur ions were implanted at room temperature in the dose range of 5×1013- 1×1015 cm-2 were annealed with continuous wave (cw) Nd:yttrium aluminum garnet (YAG) laser beam in double scan with the power density from 1.8 to 5.4×104 W cm -2 at a dwell time of 3.6 ms. Following annealing the samples were characterized by ellipsometry and the electrical activity of implanted ions was assessed by Van der Pauw type Hall measurements. At high doses, electrical activity over 20% and electron mobility of about 1500 cm 2/V s were obtained, but electrical properties were poor at low doses. It is assumed that the effect of activated impurities is compensated by defects, which were induced by cw Nd:YAG laser annealing, to a large extent.",

author = "R. Fremunt and Y. Hirayama and F. Arai and T. Sugano",

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T1 - Characterization of laser annealed InP with ellipsometry and Hall effect measurement

AU - Fremunt, R.

AU - Hirayama, Y.

AU - Arai, F.

AU - Sugano, T.

PY - 1984

Y1 - 1984

N2 - Indium phosphide layers into which sulphur ions were implanted at room temperature in the dose range of 5×1013- 1×1015 cm-2 were annealed with continuous wave (cw) Nd:yttrium aluminum garnet (YAG) laser beam in double scan with the power density from 1.8 to 5.4×104 W cm -2 at a dwell time of 3.6 ms. Following annealing the samples were characterized by ellipsometry and the electrical activity of implanted ions was assessed by Van der Pauw type Hall measurements. At high doses, electrical activity over 20% and electron mobility of about 1500 cm 2/V s were obtained, but electrical properties were poor at low doses. It is assumed that the effect of activated impurities is compensated by defects, which were induced by cw Nd:YAG laser annealing, to a large extent.

AB - Indium phosphide layers into which sulphur ions were implanted at room temperature in the dose range of 5×1013- 1×1015 cm-2 were annealed with continuous wave (cw) Nd:yttrium aluminum garnet (YAG) laser beam in double scan with the power density from 1.8 to 5.4×104 W cm -2 at a dwell time of 3.6 ms. Following annealing the samples were characterized by ellipsometry and the electrical activity of implanted ions was assessed by Van der Pauw type Hall measurements. At high doses, electrical activity over 20% and electron mobility of about 1500 cm 2/V s were obtained, but electrical properties were poor at low doses. It is assumed that the effect of activated impurities is compensated by defects, which were induced by cw Nd:YAG laser annealing, to a large extent.

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Characterization of laser annealed InP with ellipsometry and Hall effect measurement

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