Characterization of LiNb 1-x Ta x O 3 composition-spread thin film by the scanning microwave microscope

Noriaki Okazaki, Sohei Okazaki, Hiroko Higuma, Shoji Miyashita, Yasuo Cho, Jun Nishimura, Tomoteru Fukumura, Masashi Kawasaki, Makoto Murakami, Yukio Yamamoto, Yuji Matsumoto, Hideomi Koinuma, Tetsuya Hasegawa

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7 Citations (Scopus)


Dielectric property of a composition-spread LiNb 1-x Ta x O 3 thin film, fabricated by the combinatorial pulsed-laser deposition (PLD) method, was systematically characterized by the scanning microwave microscope (SμM). Measured frequency shift showed a broad maximum around x = 0.2-0.5, and gradually decreased with x, resulting in a lower dielectric constant in the LiTaO 3 side compared to the LiNbO 3 side. The trend of frequency shift has been revealed to possess a strong correlation with the sharpness of XRD peak, suggesting that lowering of dielectric constant is principally brought about by the degradation of crystallinity.

Original languageEnglish
Pages (from-to)196-199
Number of pages4
JournalApplied Surface Science
Issue number1-3
Publication statusPublished - 2004 Feb 15


  • Composition-spread thin film
  • Concurrent X-ray diffraction
  • Dielectric constant
  • High-throughput characterization
  • Lithium niobate
  • Lithium tantalate
  • Pulsed-laser deposition (PLD)
  • Scanning microwave microscope (SμM)


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