Characterization of metal-gate FinFET variability based on measurements and compact model analyses

S. O'Uchi; T. Matsukawa; T. Nakagawa; K. Endo; Y. X. Liu; T. Sekigawa; J. Tsukada; Y. Ishikawa; H. Yamauchi; K. Ishii; E. Suzuki; H. Koike; K. Sakamoto; M. Masahara

doi:10.1109/IEDM.2008.4796793

Characterization of metal-gate FinFET variability based on measurements and compact model analyses

S. O'Uchi, T. Matsukawa, T. Nakagawa, K. Endo, Y. X. Liu, T. Sekigawa, J. Tsukada, Y. Ishikawa, H. Yamauchi, K. Ishii, E. Suzuki, H. Koike, K. Sakamoto, M. Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

19 Citations (Scopus)

Abstract

A FinFET compact model, which provides physical representation of measurement data, was developed and was successfully applied to the characterization of sate-of- the-art metal-gate (MG) FinFETs. By combining the transistor size measurement and the model parameter calibration, the V _th variation of the MG FinFETs was analyzed into structure-based (77_Si, Z_G) and material-based (gate work-function) variations for the first time. In addition, the extracted variations were incorporated into the compact model, and FinFET SRAM variability for hp-32-nm node was predicted.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796793
Publication status	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

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10.1109/IEDM.2008.4796793

Cite this

O'Uchi, S., Matsukawa, T., Nakagawa, T., Endo, K., Liu, Y. X., Sekigawa, T., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ishii, K., Suzuki, E., Koike, H., Sakamoto, K., & Masahara, M. (2008). Characterization of metal-gate FinFET variability based on measurements and compact model analyses. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796793 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796793

@inproceedings{80dff4d422fe4d2c8e461ef2b578ce12,

title = "Characterization of metal-gate FinFET variability based on measurements and compact model analyses",

abstract = "A FinFET compact model, which provides physical representation of measurement data, was developed and was successfully applied to the characterization of sate-of- the-art metal-gate (MG) FinFETs. By combining the transistor size measurement and the model parameter calibration, the V th variation of the MG FinFETs was analyzed into structure-based (77Si, ZG) and material-based (gate work-function) variations for the first time. In addition, the extracted variations were incorporated into the compact model, and FinFET SRAM variability for hp-32-nm node was predicted.",

author = "S. O'Uchi and T. Matsukawa and T. Nakagawa and K. Endo and Liu, {Y. X.} and T. Sekigawa and J. Tsukada and Y. Ishikawa and H. Yamauchi and K. Ishii and E. Suzuki and H. Koike and K. Sakamoto and M. Masahara",

year = "2008",

doi = "10.1109/IEDM.2008.4796793",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

O'Uchi, S, Matsukawa, T, Nakagawa, T, Endo, K, Liu, YX, Sekigawa, T, Tsukada, J, Ishikawa, Y, Yamauchi, H, Ishii, K, Suzuki, E, Koike, H, Sakamoto, K & Masahara, M 2008, Characterization of metal-gate FinFET variability based on measurements and compact model analyses. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796793, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796793

Characterization of metal-gate FinFET variability based on measurements and compact model analyses. / O'Uchi, S.; Matsukawa, T.; Nakagawa, T. et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796793 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Characterization of metal-gate FinFET variability based on measurements and compact model analyses

AU - O'Uchi, S.

AU - Matsukawa, T.

AU - Nakagawa, T.

AU - Endo, K.

AU - Liu, Y. X.

AU - Sekigawa, T.

AU - Tsukada, J.

AU - Ishikawa, Y.

AU - Yamauchi, H.

AU - Ishii, K.

AU - Suzuki, E.

AU - Koike, H.

AU - Sakamoto, K.

AU - Masahara, M.

PY - 2008

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N2 - A FinFET compact model, which provides physical representation of measurement data, was developed and was successfully applied to the characterization of sate-of- the-art metal-gate (MG) FinFETs. By combining the transistor size measurement and the model parameter calibration, the V th variation of the MG FinFETs was analyzed into structure-based (77Si, ZG) and material-based (gate work-function) variations for the first time. In addition, the extracted variations were incorporated into the compact model, and FinFET SRAM variability for hp-32-nm node was predicted.

AB - A FinFET compact model, which provides physical representation of measurement data, was developed and was successfully applied to the characterization of sate-of- the-art metal-gate (MG) FinFETs. By combining the transistor size measurement and the model parameter calibration, the V th variation of the MG FinFETs was analyzed into structure-based (77Si, ZG) and material-based (gate work-function) variations for the first time. In addition, the extracted variations were incorporated into the compact model, and FinFET SRAM variability for hp-32-nm node was predicted.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Characterization of metal-gate FinFET variability based on measurements and compact model analyses

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