Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

Tsunehisa Sakoda; Keita Nishigaya; Tomohiro Kubo; Mitsuaki Hori; Hiroshi Minakata; Yuko Kobayashi; Hiroko Mori; Katsuji Ono; Katsuto Tanahashi; Naoyoshi Tamura; Toshifumi Mori; Yoshiharu Tosaka; Hideya Matsuyama; Chioko Kaneta; Koichi Hashimoto; Masataka Kase; Yasuo Nara

doi:10.1109/IRPS.2010.5488801

Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

Tsunehisa Sakoda, Keita Nishigaya, Tomohiro Kubo, Mitsuaki Hori, Hiroshi Minakata, Yuko Kobayashi, Hiroko Mori, Katsuji Ono, Katsuto Tanahashi, Naoyoshi Tamura, Toshifumi Mori, Yoshiharu Tosaka, Hideya Matsuyama, Chioko Kaneta, Koichi Hashimoto, Masataka Kase, Yasuo Nara

Center for Innovative Integrated Electronic Systems (CIES)

Fujitsu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

In this paper, we have investigated bulk trap and interface trap density (D_it) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.

Original language	English
Title of host publication	2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages	379-384
Number of pages	6
DOIs	https://doi.org/10.1109/IRPS.2010.5488801
Publication status	Published - 2010
Event	2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada Duration: 2010 May 2 → 2010 May 6

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2010 IEEE International Reliability Physics Symposium, IRPS 2010
Country/Territory	Canada
City	Garden Grove, CA
Period	10/5/2 → 10/5/6

Keywords

Charge pumping
Component
Dit
Flash lamp annealing
Gate current fluctuation
Laser annealing
Millisecond-anneal
SRAM reliability
V

Access to Document

10.1109/IRPS.2010.5488801

Cite this

Sakoda, T., Nishigaya, K., Kubo, T., Hori, M., Minakata, H., Kobayashi, Y., Mori, H., Ono, K., Tanahashi, K., Tamura, N., Mori, T., Tosaka, Y., Matsuyama, H., Kaneta, C., Hashimoto, K., Kase, M., & Nara, Y. (2010). Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010 (pp. 379-384). Article 5488801 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2010.5488801

@inproceedings{1afa594597e5422285806b47329c7de5,

title = "Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement",

abstract = "In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.",

keywords = "Charge pumping, Component, Dit, Flash lamp annealing, Gate current fluctuation, Laser annealing, Millisecond-anneal, SRAM reliability, V",

author = "Tsunehisa Sakoda and Keita Nishigaya and Tomohiro Kubo and Mitsuaki Hori and Hiroshi Minakata and Yuko Kobayashi and Hiroko Mori and Katsuji Ono and Katsuto Tanahashi and Naoyoshi Tamura and Toshifumi Mori and Yoshiharu Tosaka and Hideya Matsuyama and Chioko Kaneta and Koichi Hashimoto and Masataka Kase and Yasuo Nara",

year = "2010",

doi = "10.1109/IRPS.2010.5488801",

language = "English",

isbn = "9781424454310",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "379--384",

booktitle = "2010 IEEE International Reliability Physics Symposium, IRPS 2010",

note = "2010 IEEE International Reliability Physics Symposium, IRPS 2010 ; Conference date: 02-05-2010 Through 06-05-2010",

}

Sakoda, T, Nishigaya, K, Kubo, T, Hori, M, Minakata, H, Kobayashi, Y, Mori, H, Ono, K, Tanahashi, K, Tamura, N, Mori, T, Tosaka, Y, Matsuyama, H, Kaneta, C, Hashimoto, K, Kase, M & Nara, Y 2010, Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement. in 2010 IEEE International Reliability Physics Symposium, IRPS 2010., 5488801, IEEE International Reliability Physics Symposium Proceedings, pp. 379-384, 2010 IEEE International Reliability Physics Symposium, IRPS 2010, Garden Grove, CA, Canada, 10/5/2. https://doi.org/10.1109/IRPS.2010.5488801

Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement. / Sakoda, Tsunehisa; Nishigaya, Keita; Kubo, Tomohiro et al.
2010 IEEE International Reliability Physics Symposium, IRPS 2010. 2010. p. 379-384 5488801 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

AU - Sakoda, Tsunehisa

AU - Nishigaya, Keita

AU - Kubo, Tomohiro

AU - Hori, Mitsuaki

AU - Minakata, Hiroshi

AU - Kobayashi, Yuko

AU - Mori, Hiroko

AU - Ono, Katsuji

AU - Tanahashi, Katsuto

AU - Tamura, Naoyoshi

AU - Mori, Toshifumi

AU - Tosaka, Yoshiharu

AU - Matsuyama, Hideya

AU - Kaneta, Chioko

AU - Hashimoto, Koichi

AU - Kase, Masataka

AU - Nara, Yasuo

PY - 2010

Y1 - 2010

N2 - In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.

AB - In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.

KW - Charge pumping

KW - Component

KW - Dit

KW - Flash lamp annealing

KW - Gate current fluctuation

KW - Laser annealing

KW - Millisecond-anneal

KW - SRAM reliability

KW - V

UR - http://www.scopus.com/inward/record.url?scp=77957909988&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957909988&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2010.5488801

DO - 10.1109/IRPS.2010.5488801

M3 - Conference contribution

AN - SCOPUS:77957909988

SN - 9781424454310

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 379

EP - 384

BT - 2010 IEEE International Reliability Physics Symposium, IRPS 2010

T2 - 2010 IEEE International Reliability Physics Symposium, IRPS 2010

Y2 - 2 May 2010 through 6 May 2010

ER -

Sakoda T, Nishigaya K, Kubo T, Hori M, Minakata H, Kobayashi Y et al. Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010. 2010. p. 379-384. 5488801. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2010.5488801

Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this