@article{efb91a72777d4c52b2d9d86989840b33,
title = "Characterization of oxide films on 4H-SiC epitaxial (0001) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation",
abstract = "Wet and dry oxide films-4H-SiC epitaxial (000{\=1}) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as Si1+ and Si3+ were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results.",
author = "Yasuto Hijikata and Hiroyuki Yaguchi and Sadafumi Yoshida and Yasutaka Takata and Keisuke Kobayashi and Hiroshi Nohira and Takeo Hattori",
note = "Funding Information: The authors would like to thank Dr. Kojima at the National Institute of Advanced Industrial Science and Technology (AIST), Japan, for providing them with SiC epitaxial substrates of the face. The synchrotron radiation experiments were performed in the in-vacuum planar undulator beamlines BL27US and BL47XU of SPring-8 with invaluable support from Y. Tamenori, E. Ikenaga, A. Takeuchi, and M. Awaji, and the approval of the Japan Synchrotron Radiation Research Institute as a Nanotechnology Support Project of the Ministry of Education, Culture, Sports, Science and Technology (MEXT). This work is partly supported by an Industrial Technology Research Grant Program (2004-2006) from the New Energy and Industrial Technology Development Organization (NEDO) of Japan and MEXT through a Grant-in-Aid for Scientific Research (A) (No. 15206006).",
year = "2006",
doi = "10.1063/1.2345471",
language = "English",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",
}