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Characterization of surface defects of highly n-doped 4H-SiC substrates that produce dislocations in the epitaxial layer
Yukari Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, Y. Kawai, N. Shibata, T. Hirayama, Y. Ikuhara
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
5
Citations
(Scopus)