TY - JOUR
T1 - Characterization of thallium bromide detectors made from material purified by the filter method
AU - Onodera, Toshiyuki
AU - Hitomi, Keitaro
AU - Tada, Tsutomu
AU - Shoji, Tadayoshi
AU - Mochizuki, Katsumi
PY - 2013
Y1 - 2013
N2 - Thallium bromide (TlBr) has been regarded as candidate detector materials for the gamma-ray spectrometers operating at room temperature. In this study, a simple and rapid method, the filter method, was performed to purify a raw TlBr material used for fabrication of TlBr detectors. The material was loaded on shards of crashed quartz and installed in a Pyrex tube, and was melted using a furnace. A purified material passing through interspaces of the shards of quartz was collected in a quartz ampoule located at the outlet of the Pyrex tube. After the purification, impurities colored black extracted from the raw material remained. TlBr crystals were then grown by the travelling molten zone method both from the raw material and the purified material. TlBr detectors were fabricated from the grown crystals, and were characterized by measuring mobility-lifetime products (μ τ) for carriers and gamma-ray spectra (137 Cs) at room temperature. μ τ for electrons of a TlBr detector fabricated from the purified material was around 5 times higher than that of a detector fabricated from the raw material.
AB - Thallium bromide (TlBr) has been regarded as candidate detector materials for the gamma-ray spectrometers operating at room temperature. In this study, a simple and rapid method, the filter method, was performed to purify a raw TlBr material used for fabrication of TlBr detectors. The material was loaded on shards of crashed quartz and installed in a Pyrex tube, and was melted using a furnace. A purified material passing through interspaces of the shards of quartz was collected in a quartz ampoule located at the outlet of the Pyrex tube. After the purification, impurities colored black extracted from the raw material remained. TlBr crystals were then grown by the travelling molten zone method both from the raw material and the purified material. TlBr detectors were fabricated from the grown crystals, and were characterized by measuring mobility-lifetime products (μ τ) for carriers and gamma-ray spectra (137 Cs) at room temperature. μ τ for electrons of a TlBr detector fabricated from the purified material was around 5 times higher than that of a detector fabricated from the raw material.
KW - Compound semiconductors
KW - filter method
KW - semiconductor radiation detectors
KW - thallium bromide (TlBr)
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U2 - 10.1109/TNS.2013.2275171
DO - 10.1109/TNS.2013.2275171
M3 - Article
AN - SCOPUS:84886906795
SN - 0018-9499
VL - 60
SP - 3833
EP - 3836
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 5
M1 - 6585806
ER -