Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering

H. Yugami; S. Nakashima; A. Mitsuishi; A. Uemoto; M. Shigeta; K. Furukawa; A. Suzuki; S. Nakajima

doi:10.1063/1.338830

Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering

H. Yugami, S. Nakashima, A. Mitsuishi, A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, S. Nakajima

ENG - Mechanical Systems Engineering

Research output: Contribution to journal › Article › peer-review

129 Citations (Scopus)

Abstract

LO phonon-overdamped plasmon coupled modes in n-type epitaxial films of β-SiC have been measured in the carrier concentration range from 6.9×10¹⁶ to 2×10¹⁸ cm^-3. The carrier concentrations and damping constants are determined by line-shape fitting of the coupled modes and compared with the values derived from Hall measurements. The concentrations obtained from the two methods agree fairly well. The Faust-Henry coefficient determined from the fitting is 0.35. The line-shape analysis of the coupled mode has shown that the dominant scattering mechanisms in β-SiC are deformation-potential and electro-optic mechanisms.

Original language	English
Pages (from-to)	354-358
Number of pages	5
Journal	Journal of Applied Physics
Volume	61
Issue number	1
DOIs	https://doi.org/10.1063/1.338830
Publication status	Published - 1987

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10.1063/1.338830

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abstract = "LO phonon-overdamped plasmon coupled modes in n-type epitaxial films of β-SiC have been measured in the carrier concentration range from 6.9×1016 to 2×1018 cm-3. The carrier concentrations and damping constants are determined by line-shape fitting of the coupled modes and compared with the values derived from Hall measurements. The concentrations obtained from the two methods agree fairly well. The Faust-Henry coefficient determined from the fitting is 0.35. The line-shape analysis of the coupled mode has shown that the dominant scattering mechanisms in β-SiC are deformation-potential and electro-optic mechanisms.",

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T1 - Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering

AU - Yugami, H.

AU - Nakashima, S.

AU - Mitsuishi, A.

AU - Uemoto, A.

AU - Shigeta, M.

AU - Furukawa, K.

AU - Suzuki, A.

AU - Nakajima, S.

PY - 1987

Y1 - 1987

N2 - LO phonon-overdamped plasmon coupled modes in n-type epitaxial films of β-SiC have been measured in the carrier concentration range from 6.9×1016 to 2×1018 cm-3. The carrier concentrations and damping constants are determined by line-shape fitting of the coupled modes and compared with the values derived from Hall measurements. The concentrations obtained from the two methods agree fairly well. The Faust-Henry coefficient determined from the fitting is 0.35. The line-shape analysis of the coupled mode has shown that the dominant scattering mechanisms in β-SiC are deformation-potential and electro-optic mechanisms.

AB - LO phonon-overdamped plasmon coupled modes in n-type epitaxial films of β-SiC have been measured in the carrier concentration range from 6.9×1016 to 2×1018 cm-3. The carrier concentrations and damping constants are determined by line-shape fitting of the coupled modes and compared with the values derived from Hall measurements. The concentrations obtained from the two methods agree fairly well. The Faust-Henry coefficient determined from the fitting is 0.35. The line-shape analysis of the coupled mode has shown that the dominant scattering mechanisms in β-SiC are deformation-potential and electro-optic mechanisms.

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Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering

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