Characterization of Ti_{1 - x}B_x films deposited by a co-sputtering method

Titanium boride films (Ti_{1 - x}B_x: 0.5 < x < 0.77) were deposited by the co-sputtering method onto molybdenum substrates at 870 K. A negative bias voltage was applied to the substrate during deposition of the stoichiometric TiB₂ by applying an r.f. power of 0-500 W to the substrates. The soft X-ray spectroscopy and other results of characterization showed that stoichiometric TiB₂ could be formed by the present co-sputtering method. The application of a negative bias voltage to substrates enhanced the crystallization of TiB₂ in the films. We evaluated thermal stability, deuterium retention behaviour and sputter erosion behaviour under 2 keV deuterium ion bombardment of deposited Ti_{1 - x}B_x films as functions of their chemical composition and of applied bias voltage. The paper will be focused particularly on the effects of the application of a bias voltage.