Characterization of TlBr x Cl 1-x crystals for radiation detectors

Toshiyuki Onodera; Keitaro Hitomi; Chikara Onodera; Tadayoshi Shoji; Katsumi Mochizuki

doi:10.1109/TNS.2012.2200504

Characterization of TlBr _x Cl _1-x crystals for radiation detectors

Toshiyuki Onodera, Keitaro Hitomi, Chikara Onodera, Tadayoshi Shoji, Katsumi Mochizuki

ENG - Quantum Science and Energy Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Thallium bromide chloride (TlBr _x Cl _1-x) crystals have been evaluated as a material used for fabrication of room temperature radiation detectors. In this study, TlBr _x Cl _1-x crystals with various chlorine (Cl) concentrations were grown by the travelling molten zone method and the detectors were fabricated from the crystals. The optical properties of the crystals were evaluated by measuring the transmittances. The charge transport properties were characterized by the Hecht analysis. The band gap energy of the crystals proportionally increased with Cl concentration. Mobility-lifetime products (μm τ) of the crystals decreased with increasing Cl concentration.

Original language	English
Article number	6220884
Pages (from-to)	1559-1562
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	4 PART 3
DOIs	https://doi.org/10.1109/TNS.2012.2200504
Publication status	Published - 2012

Keywords

Compound semiconductors
semiconductor radiation detectors
thallium bromide (TlBr)

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10.1109/TNS.2012.2200504

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@article{20d5723896bf47288e8c646d31e77c7b,

title = "Characterization of TlBr x Cl 1-x crystals for radiation detectors",

abstract = "Thallium bromide chloride (TlBr x Cl 1-x) crystals have been evaluated as a material used for fabrication of room temperature radiation detectors. In this study, TlBr x Cl 1-x crystals with various chlorine (Cl) concentrations were grown by the travelling molten zone method and the detectors were fabricated from the crystals. The optical properties of the crystals were evaluated by measuring the transmittances. The charge transport properties were characterized by the Hecht analysis. The band gap energy of the crystals proportionally increased with Cl concentration. Mobility-lifetime products (μm τ) of the crystals decreased with increasing Cl concentration.",

keywords = "Compound semiconductors, semiconductor radiation detectors, thallium bromide (TlBr)",

author = "Toshiyuki Onodera and Keitaro Hitomi and Chikara Onodera and Tadayoshi Shoji and Katsumi Mochizuki",

year = "2012",

doi = "10.1109/TNS.2012.2200504",

language = "English",

volume = "59",

pages = "1559--1562",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4 PART 3",

}

TY - JOUR

T1 - Characterization of TlBr x Cl 1-x crystals for radiation detectors

AU - Onodera, Toshiyuki

AU - Hitomi, Keitaro

AU - Onodera, Chikara

AU - Shoji, Tadayoshi

AU - Mochizuki, Katsumi

PY - 2012

Y1 - 2012

N2 - Thallium bromide chloride (TlBr x Cl 1-x) crystals have been evaluated as a material used for fabrication of room temperature radiation detectors. In this study, TlBr x Cl 1-x crystals with various chlorine (Cl) concentrations were grown by the travelling molten zone method and the detectors were fabricated from the crystals. The optical properties of the crystals were evaluated by measuring the transmittances. The charge transport properties were characterized by the Hecht analysis. The band gap energy of the crystals proportionally increased with Cl concentration. Mobility-lifetime products (μm τ) of the crystals decreased with increasing Cl concentration.

AB - Thallium bromide chloride (TlBr x Cl 1-x) crystals have been evaluated as a material used for fabrication of room temperature radiation detectors. In this study, TlBr x Cl 1-x crystals with various chlorine (Cl) concentrations were grown by the travelling molten zone method and the detectors were fabricated from the crystals. The optical properties of the crystals were evaluated by measuring the transmittances. The charge transport properties were characterized by the Hecht analysis. The band gap energy of the crystals proportionally increased with Cl concentration. Mobility-lifetime products (μm τ) of the crystals decreased with increasing Cl concentration.

KW - Compound semiconductors

KW - semiconductor radiation detectors

KW - thallium bromide (TlBr)

UR - http://www.scopus.com/inward/record.url?scp=84865386706&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865386706&partnerID=8YFLogxK

U2 - 10.1109/TNS.2012.2200504

DO - 10.1109/TNS.2012.2200504

M3 - Article

AN - SCOPUS:84865386706

SN - 0018-9499

VL - 59

SP - 1559

EP - 1562

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 4 PART 3

M1 - 6220884

ER -

Characterization of TlBr _x Cl _1-x crystals for radiation detectors

Abstract

Keywords

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