Characterization of wave propagation on traveling-wave field effect transistors

Koichi Narahara, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The wave propagation characteristics along the electrodes of traveling-wave field effect transistors (TW-FETs) are described. Due to the fine gate structure of present high-speed FETs, the performance is greatly influenced by the electromagnetic coupling between the gate line and the drain line. No previous study has introduced a design method that can resolve this issue. The main purpose of this article is to clarify the characteristics of TW-FETs, and then, propose new design methods that cope with the coupling. The conditions under which TW-FETs yield ultrafast operation even with coupling are derived and then the results and implications of experimental investigations that measured the impulse response of a TW-FET using electro-optic sampling techniques are discussed.

Original languageEnglish
Pages (from-to)6328-6339
Number of pages12
JournalJapanese Journal of Applied Physics
Issue number12
Publication statusPublished - 1998 Dec


  • Compound semiconductors
  • Electro-optic sampling
  • Traveling-wave FETs
  • Ultrafast electronics
  • Waveguides


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