TY - GEN
T1 - Charge-carrier dynamics near the Mott-Anderson transition in molecular conductors
AU - Muller, Jens
AU - Rommel, Robert
AU - Sasaki, Takahiko
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/10/2
Y1 - 2015/10/2
N2 - We report on fluctuation spectroscopy measurements as a powerful new tool to study the low-frequency dynamics of correlated charge carriers in quasi-two-dimensional molecular conductors κ-(BEDT-TTF)2X. These materials are on the verge of a Mott metal-insulator transition. In earlier studies, a diverging 1/f-type noise has been observed upon approaching the finite-temperature critical endpoint of the Mott transition accompanied by a strong shift of spectral weight to low frequency and the onset of non-Gaussian fluctuations. In this paper, we discuss first results on a sample on the metallic side of the Mott transition, which is modified by disorder induced by x-ray irradiation. Upon approaching the Anderson-type localization, a pronounced peak in the noise indicates a strong change in the dynamics of the strongly correlated charge carriers.
AB - We report on fluctuation spectroscopy measurements as a powerful new tool to study the low-frequency dynamics of correlated charge carriers in quasi-two-dimensional molecular conductors κ-(BEDT-TTF)2X. These materials are on the verge of a Mott metal-insulator transition. In earlier studies, a diverging 1/f-type noise has been observed upon approaching the finite-temperature critical endpoint of the Mott transition accompanied by a strong shift of spectral weight to low frequency and the onset of non-Gaussian fluctuations. In this paper, we discuss first results on a sample on the metallic side of the Mott transition, which is modified by disorder induced by x-ray irradiation. Upon approaching the Anderson-type localization, a pronounced peak in the noise indicates a strong change in the dynamics of the strongly correlated charge carriers.
KW - 1/f-noise
KW - Anderson localization
KW - low-dimensional molecular metals
KW - Mott metal-insulator transition
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U2 - 10.1109/ICNF.2015.7288537
DO - 10.1109/ICNF.2015.7288537
M3 - Conference contribution
AN - SCOPUS:84961777887
T3 - 2015 International Conference on Noise and Fluctuations, ICNF 2015
BT - 2015 International Conference on Noise and Fluctuations, ICNF 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Conference on Noise and Fluctuations, ICNF 2015
Y2 - 2 June 2015 through 6 June 2015
ER -