TY - JOUR
T1 - Charge-dependent oxygen vacancy diffusion in Al2O 3-based resistive-random-access-memories
AU - Yang, Moon Young
AU - Kamiya, Katsumasa
AU - Magyari-Köpe, Blanka
AU - Niwa, Masaaki
AU - Nishi, Yoshio
AU - Shiraishi, Kenji
N1 - Funding Information:
The authors would like to thank Dr. Ohno and Dr. Momida for fruitful discussions. And also we are very grateful to Professor Hatsugai for his support on research environment. Computations were performed on Intel Xeon at the Institute for Solid-State Physics, The University of Tokyo, and a Fujitsu Primergy RX300 at the Research Center for Computational Science, Okazaki Research Facilities, National Institutes of Natural Sciences. This research was supported by a University of Tsukuba Research Infrastructure Support Program (A) and a Grant-in-Aid for Young Scientists (B) (Grant No. 22740259) from the Japan Society for the Promotion of Science.
PY - 2013/8/26
Y1 - 2013/8/26
N2 - We theoretically study an oxygen vacancy (V O) diffusion in Al 2O3-based resistive-random-access-memories (ReRAMs). We find that the activation energy of V O diffusion in Al2O3 strongly depends on the charge state of V O. In ReRAM, the charge state of V O can be easily changed by applying voltage and the lowest activation energy is observed at q = 2+. The operation voltage on Al2O3-based ReRAM is close to the activation energy at q = 2+, indicating that V O diffuses with doubly positive state. Moreover, the activation energy at q = 0 is close to that observed in bulk Al2O3, which explains the discrepancy between previous experimental and theoretical studies.
AB - We theoretically study an oxygen vacancy (V O) diffusion in Al 2O3-based resistive-random-access-memories (ReRAMs). We find that the activation energy of V O diffusion in Al2O3 strongly depends on the charge state of V O. In ReRAM, the charge state of V O can be easily changed by applying voltage and the lowest activation energy is observed at q = 2+. The operation voltage on Al2O3-based ReRAM is close to the activation energy at q = 2+, indicating that V O diffuses with doubly positive state. Moreover, the activation energy at q = 0 is close to that observed in bulk Al2O3, which explains the discrepancy between previous experimental and theoretical studies.
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U2 - 10.1063/1.4819772
DO - 10.1063/1.4819772
M3 - Article
AN - SCOPUS:84884201658
SN - 0003-6951
VL - 103
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 9
M1 - 093504
ER -