Charge-dependent oxygen vacancy diffusion in Al2O 3-based resistive-random-access-memories

Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi

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41 Citations (Scopus)


We theoretically study an oxygen vacancy (V O) diffusion in Al 2O3-based resistive-random-access-memories (ReRAMs). We find that the activation energy of V O diffusion in Al2O3 strongly depends on the charge state of V O. In ReRAM, the charge state of V O can be easily changed by applying voltage and the lowest activation energy is observed at q = 2+. The operation voltage on Al2O3-based ReRAM is close to the activation energy at q = 2+, indicating that V O diffuses with doubly positive state. Moreover, the activation energy at q = 0 is close to that observed in bulk Al2O3, which explains the discrepancy between previous experimental and theoretical studies.

Original languageEnglish
Article number093504
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2013 Aug 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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