@inproceedings{81ff94a2eb8949e09c48e4dc26eeb83a,
title = "Charge state evaluation of passivation layers for silicon solar cells by scanning nonlinear dielectric microscopy",
abstract = "Nano scale charge states in Al3O3 passivation layers of mono-crystalline silicon solar cells and at Al3O3/Si interface were evaluated by using scanning nonlinear dielectric microscopy (SNDM). SNDM visualized microscopic non-uniformity of dC/dV in Al2O3 passivation layers. The inhomogeneous distribution of fixed charge Qf in Al3O3 thin film and interface density of sate Dit was observed from the measurement of local CV curves obtained by super-higher order-scanning nonlinear dielectric microscopy (SHO-SNDM). Variations of Qf and Dit caused by annealing were clearly detected. Moreover, density of increased number of fixed electron by annealing was quantitatively evaluated to be 3.0×1012/cm2. It was close to the value obtained by macroscopic measurement.",
keywords = "Charge state, monocrystalline silicon solar cell, passivation layer, scanning nonlinear dielectric microscopy",
author = "K. Kakikawa and Yuji Yamagishi and Y. Cho and K. Tanahashi and H. Takato",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353683",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "PPV.11--PPV.14",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
note = "2018 IEEE International Reliability Physics Symposium, IRPS 2018 ; Conference date: 11-03-2018 Through 15-03-2018",
}