Charge trapping type FinFET flash memory with Al2O3 blocking layer

Y. X. Liu; T. Nabatame; T. Matsukawa; K. Endo; S. O'Uchi; J. Tsukada; H. Yamauchi; Y. Ishikawa; W. Mizubayashi; Y. Morita; S. Migita; H. Ota; T. Chikyow; M. Masahara

doi:10.1109/S3S.2013.6716572

Charge trapping type FinFET flash memory with Al₂O₃ blocking layer

Y. X. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Original language	English
Title of host publication	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Publisher	IEEE Computer Society
ISBN (Print)	9781479913602
DOIs	https://doi.org/10.1109/S3S.2013.6716572
Publication status	Published - 2013
Event	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States Duration: 2013 Oct 7 → 2013 Oct 10

Publication series

Name	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Conference

Conference	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Country/Territory	United States
City	Monterey, CA
Period	13/10/7 → 13/10/10

Access to Document

10.1109/S3S.2013.6716572

Cite this

Liu, Y. X., Nabatame, T., Matsukawa, T., Endo, K., O'Uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Chikyow, T., & Masahara, M. (2013). Charge trapping type FinFET flash memory with Al₂O₃ blocking layer. In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 Article 6716572 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). IEEE Computer Society. https://doi.org/10.1109/S3S.2013.6716572

@inproceedings{e5a163cb1fbf468eaeee5bf2ea47b7a4,

title = "Charge trapping type FinFET flash memory with Al2O3 blocking layer",

author = "Liu, {Y. X.} and T. Nabatame and T. Matsukawa and K. Endo and S. O'Uchi and J. Tsukada and H. Yamauchi and Y. Ishikawa and W. Mizubayashi and Y. Morita and S. Migita and H. Ota and T. Chikyow and M. Masahara",

year = "2013",

doi = "10.1109/S3S.2013.6716572",

language = "English",

isbn = "9781479913602",

series = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

publisher = "IEEE Computer Society",

booktitle = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

address = "United States",

note = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 ; Conference date: 07-10-2013 Through 10-10-2013",

}

Liu, YX, Nabatame, T, Matsukawa, T, Endo, K, O'Uchi, S, Tsukada, J, Yamauchi, H, Ishikawa, Y, Mizubayashi, W, Morita, Y, Migita, S, Ota, H, Chikyow, T & Masahara, M 2013, Charge trapping type FinFET flash memory with Al₂O₃ blocking layer. in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013., 6716572, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, IEEE Computer Society, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Monterey, CA, United States, 13/10/7. https://doi.org/10.1109/S3S.2013.6716572

Charge trapping type FinFET flash memory with Al₂O₃ blocking layer. / Liu, Y. X.; Nabatame, T.; Matsukawa, T. et al.
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society, 2013. 6716572 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Charge trapping type FinFET flash memory with Al2O3 blocking layer

AU - Liu, Y. X.

AU - Nabatame, T.

AU - Matsukawa, T.

AU - Endo, K.

AU - O'Uchi, S.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Ishikawa, Y.

AU - Mizubayashi, W.

AU - Morita, Y.

AU - Migita, S.

AU - Ota, H.

AU - Chikyow, T.

AU - Masahara, M.

PY - 2013

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DO - 10.1109/S3S.2013.6716572

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T3 - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

BT - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

PB - IEEE Computer Society

T2 - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Y2 - 7 October 2013 through 10 October 2013

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