Checkered white-RGB color LOFIC CMOS image sensor

Shun Kawada; Shin Sakai; Yoshiaki Tashiro; Shigetoshi Sugawa

doi:10.1109/ASPDAC.2010.5419870

Checkered white-RGB color LOFIC CMOS image sensor

Shun Kawada, Shin Sakai, Yoshiaki Tashiro, Shigetoshi Sugawa

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We succeeded in developing a checkered White-RGB color CMOS image sensor based on a lateral overflow integration capacitor (LOFIC) architecture. The LOFIC CMOS image sensor with a 1/3.3-inch optical format, 1280^H x 480^V pixels, 4.2-μm effective pixel pitch along with 45° direction was designed and fabricated through 0.18-μm 2-Poly 3-Metal CMOS technology with buried pinned photodiode (PD) process. The image sensor has achieved about 108-μV/e^- high conversion gain and about 102-dB dynamic range (DR) performance in one exposure.

Original language	English
Title of host publication	2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010
Pages	347-348
Number of pages	2
DOIs	https://doi.org/10.1109/ASPDAC.2010.5419870
Publication status	Published - 2010
Event	2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010 - Taipei, Taiwan, Province of China Duration: 2010 Jan 18 → 2010 Jan 21

Publication series

Name	Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC

Conference

Conference	2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010
Country/Territory	Taiwan, Province of China
City	Taipei
Period	10/1/18 → 10/1/21

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10.1109/ASPDAC.2010.5419870

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title = "Checkered white-RGB color LOFIC CMOS image sensor",

abstract = "We succeeded in developing a checkered White-RGB color CMOS image sensor based on a lateral overflow integration capacitor (LOFIC) architecture. The LOFIC CMOS image sensor with a 1/3.3-inch optical format, 1280H x 480V pixels, 4.2-μm effective pixel pitch along with 45° direction was designed and fabricated through 0.18-μm 2-Poly 3-Metal CMOS technology with buried pinned photodiode (PD) process. The image sensor has achieved about 108-μV/e- high conversion gain and about 102-dB dynamic range (DR) performance in one exposure.",

author = "Shun Kawada and Shin Sakai and Yoshiaki Tashiro and Shigetoshi Sugawa",

year = "2010",

doi = "10.1109/ASPDAC.2010.5419870",

language = "English",

isbn = "9781424457656",

series = "Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC",

pages = "347--348",

booktitle = "2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010",

note = "2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010 ; Conference date: 18-01-2010 Through 21-01-2010",

}

Kawada, S, Sakai, S, Tashiro, Y & Sugawa, S 2010, Checkered white-RGB color LOFIC CMOS image sensor. in 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010., 5419870, Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC, pp. 347-348, 2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010, Taipei, Taiwan, Province of China, 10/1/18. https://doi.org/10.1109/ASPDAC.2010.5419870

Checkered white-RGB color LOFIC CMOS image sensor. / Kawada, Shun; Sakai, Shin; Tashiro, Yoshiaki et al.
2010 15th Asia and South Pacific Design Automation Conference, ASP-DAC 2010. 2010. p. 347-348 5419870 (Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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PY - 2010

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N2 - We succeeded in developing a checkered White-RGB color CMOS image sensor based on a lateral overflow integration capacitor (LOFIC) architecture. The LOFIC CMOS image sensor with a 1/3.3-inch optical format, 1280H x 480V pixels, 4.2-μm effective pixel pitch along with 45° direction was designed and fabricated through 0.18-μm 2-Poly 3-Metal CMOS technology with buried pinned photodiode (PD) process. The image sensor has achieved about 108-μV/e- high conversion gain and about 102-dB dynamic range (DR) performance in one exposure.

AB - We succeeded in developing a checkered White-RGB color CMOS image sensor based on a lateral overflow integration capacitor (LOFIC) architecture. The LOFIC CMOS image sensor with a 1/3.3-inch optical format, 1280H x 480V pixels, 4.2-μm effective pixel pitch along with 45° direction was designed and fabricated through 0.18-μm 2-Poly 3-Metal CMOS technology with buried pinned photodiode (PD) process. The image sensor has achieved about 108-μV/e- high conversion gain and about 102-dB dynamic range (DR) performance in one exposure.

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Checkered white-RGB color LOFIC CMOS image sensor

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