Chemical bonds at and near the SiO2/Si interface

Takeo Hattori; Takayuki Igarashi; Makoto Ohi; Hiroaki Yamagishi

Chemical bonds at and near the SiO₂/Si interface

Takeo Hattori, Takayuki Igarashi, Makoto Ohi, Hiroaki Yamagishi

Research output: Contribution to journal › Article › peer-review

Abstract

The concept of local electronegativity defined by G. Lucovsky was modified and applied to the study of the chemical bonds at and near the SiO₂/Si interface. Even for a flat interface and no Si-Si bond in the oxide film, chemical bonds different from those in the bulk are found to exist not only at the interface, but also near the interface. The local electronegativities of silicon and oxygen atoms change their magnitudes within 1 nm of the interface.

Original language	English
Pages (from-to)	1436-1438
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	28
Issue number	8
Publication status	Published - 1989 Aug

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The concept of local electronegativity defined by G. Lucovsky was modified and applied to the study of the chemical bonds at and near the SiO2/Si interface. Even for a flat interface and no Si-Si bond in the oxide film, chemical bonds different from those in the bulk are found to exist not only at the interface, but also near the interface. The local electronegativities of silicon and oxygen atoms change their magnitudes within 1 nm of the interface.",

author = "Takeo Hattori and Takayuki Igarashi and Makoto Ohi and Hiroaki Yamagishi",

year = "1989",

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AU - Hattori, Takeo

AU - Igarashi, Takayuki

AU - Ohi, Makoto

AU - Yamagishi, Hiroaki

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N2 - The concept of local electronegativity defined by G. Lucovsky was modified and applied to the study of the chemical bonds at and near the SiO2/Si interface. Even for a flat interface and no Si-Si bond in the oxide film, chemical bonds different from those in the bulk are found to exist not only at the interface, but also near the interface. The local electronegativities of silicon and oxygen atoms change their magnitudes within 1 nm of the interface.

AB - The concept of local electronegativity defined by G. Lucovsky was modified and applied to the study of the chemical bonds at and near the SiO2/Si interface. Even for a flat interface and no Si-Si bond in the oxide film, chemical bonds different from those in the bulk are found to exist not only at the interface, but also near the interface. The local electronegativities of silicon and oxygen atoms change their magnitudes within 1 nm of the interface.

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ER -

Chemical bonds at and near the SiO₂/Si interface

Abstract

ASJC Scopus subject areas

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