TY - JOUR
T1 - Chemical interaction of NF3 with Si (Part II)
T2 - density functional calculation studies
AU - Endou, A.
AU - Little, T. W.
AU - Yamada, A.
AU - Teraishi, K.
AU - Kubo, M.
AU - Ammal, S. S.C.
AU - Miyamoto, A.
AU - Kitajima, M.
AU - Ohuchi, F. S.
N1 - Funding Information:
This work was partly supported by Research Fellowship of the Japan Society for the Promotion of Science for Young Scientists and American Chemical Society — The Petroleum Research Fund (#33613-AC5-SF99). Thanks are also due to Richard Louie of the Pacific Lutheran University for his critical reading of the manuscript.
PY - 2000/1/20
Y1 - 2000/1/20
N2 - The interaction of NF3-generated ion beam and plasma with a Si surface as studied by X-ray photoelectron spectroscopy was reported in Part I. Interpretation and rationalization of the peak positions were made initially based on the expected charge on each atom based on Pauling electronegativity values. Quantum chemical calculations based on density functional theory (DFT) were performed to test the validity of the qualitative electronegativity approach. Using Si10H16 clusters as a model, adsorption of F atoms on H-Si(111)-1 × 1 and H-Si(100)-1 × 1 surfaces, the stability of F atoms at two kinds of interstitial sites and their atomic charges, was determined. Mulliken atomic charge analysis indicated that the adsorbed F atoms on Si surfaces as well as at the interstitial sites possess large negative charges by forming Si-F bonds, whereas less negative charges were associated with F atoms bound to surface Si-N species. The DFT calculations confirmed the expected changes in atomic charge and the direction of binding energy shift for F-N-Si moieties.
AB - The interaction of NF3-generated ion beam and plasma with a Si surface as studied by X-ray photoelectron spectroscopy was reported in Part I. Interpretation and rationalization of the peak positions were made initially based on the expected charge on each atom based on Pauling electronegativity values. Quantum chemical calculations based on density functional theory (DFT) were performed to test the validity of the qualitative electronegativity approach. Using Si10H16 clusters as a model, adsorption of F atoms on H-Si(111)-1 × 1 and H-Si(100)-1 × 1 surfaces, the stability of F atoms at two kinds of interstitial sites and their atomic charges, was determined. Mulliken atomic charge analysis indicated that the adsorbed F atoms on Si surfaces as well as at the interstitial sites possess large negative charges by forming Si-F bonds, whereas less negative charges were associated with F atoms bound to surface Si-N species. The DFT calculations confirmed the expected changes in atomic charge and the direction of binding energy shift for F-N-Si moieties.
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U2 - 10.1016/S0039-6028(99)01062-6
DO - 10.1016/S0039-6028(99)01062-6
M3 - Article
AN - SCOPUS:0033882310
SN - 0039-6028
VL - 445
SP - 243
EP - 248
JO - Surface Science
JF - Surface Science
IS - 2-3
ER -