Chemical mechanical polishing mechanisms for gallium nitride: Quantum chemical molecular dynamics simulations

Kentaro Kawaguchi; Takehiro Aizawa; Yuji Higuchi; Nobuki Ozawa; Momoji Kubo

doi:10.1109/ICPT.2014.7017241

Chemical mechanical polishing mechanisms for gallium nitride: Quantum chemical molecular dynamics simulations

Kentaro Kawaguchi, Takehiro Aizawa, Yuji Higuchi, Nobuki Ozawa, Momoji Kubo

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

We developed a chemical mechanical polishing (CMP) simulator based on tight-binding quantum chemical molecular dynamics method and applied it to gallium nitride (GaN) CMP process. We successfully clarified the chemical reaction dynamics at the friction interface between the GaN substrate and an abrasive grain in pure water; surface-adsorbed H2O molecules, OH groups, and H atoms are generated by the adsorption and dissociation of water on the GaN surface. Our developed CMP simulator is capable of predicting the CMP processes controlled by chemical reactions.

Original language	English
Title of host publication	ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	39-41
Number of pages	3
ISBN (Electronic)	9781479955565
DOIs	https://doi.org/10.1109/ICPT.2014.7017241
Publication status	Published - 2015 Jan 20
Event	11th International Conference on Planarization/CMP Technology, ICPT 2014 - Kobe, Japan Duration: 2014 Nov 19 → 2014 Nov 21

Publication series

Name	ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014

Conference

Conference	11th International Conference on Planarization/CMP Technology, ICPT 2014
Country/Territory	Japan
City	Kobe
Period	14/11/19 → 14/11/21

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10.1109/ICPT.2014.7017241

Cite this

Kawaguchi, K., Aizawa, T., Higuchi, Y., Ozawa, N., & Kubo, M. (2015). Chemical mechanical polishing mechanisms for gallium nitride: Quantum chemical molecular dynamics simulations. In ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014 (pp. 39-41). Article 7017241 (ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICPT.2014.7017241

Kawaguchi, Kentaro ; Aizawa, Takehiro ; Higuchi, Yuji et al. / Chemical mechanical polishing mechanisms for gallium nitride : Quantum chemical molecular dynamics simulations. ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 39-41 (ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014).

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title = "Chemical mechanical polishing mechanisms for gallium nitride: Quantum chemical molecular dynamics simulations",

abstract = "We developed a chemical mechanical polishing (CMP) simulator based on tight-binding quantum chemical molecular dynamics method and applied it to gallium nitride (GaN) CMP process. We successfully clarified the chemical reaction dynamics at the friction interface between the GaN substrate and an abrasive grain in pure water; surface-adsorbed H2O molecules, OH groups, and H atoms are generated by the adsorption and dissociation of water on the GaN surface. Our developed CMP simulator is capable of predicting the CMP processes controlled by chemical reactions.",

author = "Kentaro Kawaguchi and Takehiro Aizawa and Yuji Higuchi and Nobuki Ozawa and Momoji Kubo",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 11th International Conference on Planarization/CMP Technology, ICPT 2014 ; Conference date: 19-11-2014 Through 21-11-2014",

year = "2015",

month = jan,

day = "20",

doi = "10.1109/ICPT.2014.7017241",

language = "English",

series = "ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "United States",

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Kawaguchi, K, Aizawa, T, Higuchi, Y, Ozawa, N & Kubo, M 2015, Chemical mechanical polishing mechanisms for gallium nitride: Quantum chemical molecular dynamics simulations. in ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014., 7017241, ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014, Institute of Electrical and Electronics Engineers Inc., pp. 39-41, 11th International Conference on Planarization/CMP Technology, ICPT 2014, Kobe, Japan, 14/11/19. https://doi.org/10.1109/ICPT.2014.7017241

Chemical mechanical polishing mechanisms for gallium nitride: Quantum chemical molecular dynamics simulations. / Kawaguchi, Kentaro; Aizawa, Takehiro; Higuchi, Yuji et al.
ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc., 2015. p. 39-41 7017241 (ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Chemical mechanical polishing mechanisms for gallium nitride

T2 - 11th International Conference on Planarization/CMP Technology, ICPT 2014

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AU - Kubo, Momoji

PY - 2015/1/20

Y1 - 2015/1/20

N2 - We developed a chemical mechanical polishing (CMP) simulator based on tight-binding quantum chemical molecular dynamics method and applied it to gallium nitride (GaN) CMP process. We successfully clarified the chemical reaction dynamics at the friction interface between the GaN substrate and an abrasive grain in pure water; surface-adsorbed H2O molecules, OH groups, and H atoms are generated by the adsorption and dissociation of water on the GaN surface. Our developed CMP simulator is capable of predicting the CMP processes controlled by chemical reactions.

AB - We developed a chemical mechanical polishing (CMP) simulator based on tight-binding quantum chemical molecular dynamics method and applied it to gallium nitride (GaN) CMP process. We successfully clarified the chemical reaction dynamics at the friction interface between the GaN substrate and an abrasive grain in pure water; surface-adsorbed H2O molecules, OH groups, and H atoms are generated by the adsorption and dissociation of water on the GaN surface. Our developed CMP simulator is capable of predicting the CMP processes controlled by chemical reactions.

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M3 - Conference contribution

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T3 - ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014

SP - 39

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BT - ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014

PB - Institute of Electrical and Electronics Engineers Inc.

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Kawaguchi K, Aizawa T, Higuchi Y, Ozawa N , Kubo M. Chemical mechanical polishing mechanisms for gallium nitride: Quantum chemical molecular dynamics simulations. In ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc. 2015. p. 39-41. 7017241. (ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014). doi: 10.1109/ICPT.2014.7017241

Chemical mechanical polishing mechanisms for gallium nitride: Quantum chemical molecular dynamics simulations

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