Chemical reaction dynamics of SiO₂ etching by CF₂ radicals: Tight-binding quantum chemical molecular dynamics simulations

Physics

• Molecular Dynamics 100%
• Etching 83%
• Radiation Effect 66%
• Speed 50%
• Binding 50%
• Ratios 33%
• Aspect Ratio 16%
• Dissociation 16%
• Plasma Etching 16%
• Molecules 16%
• Atoms 16%
• Evaluation 16%
• Width 16%
• Chemical Reaction 16%

Chemistry

• Etching 83%
• Velocity 50%
• Chemical Bond 33%
• Irradiation 33%
• Carbon Dioxide 33%
• Dissociation 16%
• Reaction Dynamics 16%
• Chemical Reaction 16%
• Molecule 16%
• Atom 16%
• Rate 16%
• Surface 16%

Engineering

• Etching Process 33%
• Simulators 33%
• Efficiency 33%
• Good Agreement 16%
• Aspect Ratio 16%
• Penetration Depth 16%
• Experiments 16%
• Surfaces 16%
• Evaluation 16%