Chemical-state-resolved depth profiles of Al/Pr0.7Ca 0.3MnO3 stacked structures for application in resistive switching devices

S. Toyoda; T. Namiki; E. Sakai; K. Nakata; M. Oshima; H. Kumigashira

doi:10.1063/1.4858381

Chemical-state-resolved depth profiles of Al/Pr_0.7Ca _0.3MnO₃ stacked structures for application in resistive switching devices

S. Toyoda, T. Namiki, E. Sakai, K. Nakata, M. Oshima, H. Kumigashira

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the interfacial chemical reaction between Al metal electrodes and Pr_0.7Ca_0.3MnO₃ perovskite oxides to shed light on the underlying mechanism of resistive switching phenomenon that can be utilized in random access memory devices. Depth profiles of the Al/Pr_0.7Ca_0.3MnO₃ interface show the formation of Al₂O₃ layers resulting from redox reactions between Al metal and perovskite oxide. Angle-resolved Mn 2p core-level photoemission spectra, which are independent of the Al metal electrode thickness, show that a Mn-Al alloy is formed at the interface between Al metal and Al₂O ₃ layers during the initial growth of the Al metal electrode. This suggests that the Mn impurity level in the band gap of Al₂O ₃ layers plays an important role in resistive switching characteristics.

Original language	English
Article number	243711
Journal	Journal of Applied Physics
Volume	114
Issue number	24
DOIs	https://doi.org/10.1063/1.4858381
Publication status	Published - 2013 Dec 28

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title = "Chemical-state-resolved depth profiles of Al/Pr0.7Ca 0.3MnO3 stacked structures for application in resistive switching devices",

abstract = "We have investigated the interfacial chemical reaction between Al metal electrodes and Pr0.7Ca0.3MnO3 perovskite oxides to shed light on the underlying mechanism of resistive switching phenomenon that can be utilized in random access memory devices. Depth profiles of the Al/Pr0.7Ca0.3MnO3 interface show the formation of Al2O3 layers resulting from redox reactions between Al metal and perovskite oxide. Angle-resolved Mn 2p core-level photoemission spectra, which are independent of the Al metal electrode thickness, show that a Mn-Al alloy is formed at the interface between Al metal and Al2O 3 layers during the initial growth of the Al metal electrode. This suggests that the Mn impurity level in the band gap of Al2O 3 layers plays an important role in resistive switching characteristics.",

author = "S. Toyoda and T. Namiki and E. Sakai and K. Nakata and M. Oshima and H. Kumigashira",

note = "Funding Information: This work was supported by the PRESTO program, JST, Japan, and the Element Strategy Initiative Project, MEXT, Japan. Synchrotron-radiation photoelectron measurements were performed under Project Nos. 11S2-003 and 12G-758 at the Institute of Materials Structure Science, KEK, Japan.",

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doi = "10.1063/1.4858381",

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T1 - Chemical-state-resolved depth profiles of Al/Pr0.7Ca 0.3MnO3 stacked structures for application in resistive switching devices

AU - Toyoda, S.

AU - Namiki, T.

AU - Sakai, E.

AU - Nakata, K.

AU - Oshima, M.

AU - Kumigashira, H.

N1 - Funding Information: This work was supported by the PRESTO program, JST, Japan, and the Element Strategy Initiative Project, MEXT, Japan. Synchrotron-radiation photoelectron measurements were performed under Project Nos. 11S2-003 and 12G-758 at the Institute of Materials Structure Science, KEK, Japan.

PY - 2013/12/28

Y1 - 2013/12/28

N2 - We have investigated the interfacial chemical reaction between Al metal electrodes and Pr0.7Ca0.3MnO3 perovskite oxides to shed light on the underlying mechanism of resistive switching phenomenon that can be utilized in random access memory devices. Depth profiles of the Al/Pr0.7Ca0.3MnO3 interface show the formation of Al2O3 layers resulting from redox reactions between Al metal and perovskite oxide. Angle-resolved Mn 2p core-level photoemission spectra, which are independent of the Al metal electrode thickness, show that a Mn-Al alloy is formed at the interface between Al metal and Al2O 3 layers during the initial growth of the Al metal electrode. This suggests that the Mn impurity level in the band gap of Al2O 3 layers plays an important role in resistive switching characteristics.

AB - We have investigated the interfacial chemical reaction between Al metal electrodes and Pr0.7Ca0.3MnO3 perovskite oxides to shed light on the underlying mechanism of resistive switching phenomenon that can be utilized in random access memory devices. Depth profiles of the Al/Pr0.7Ca0.3MnO3 interface show the formation of Al2O3 layers resulting from redox reactions between Al metal and perovskite oxide. Angle-resolved Mn 2p core-level photoemission spectra, which are independent of the Al metal electrode thickness, show that a Mn-Al alloy is formed at the interface between Al metal and Al2O 3 layers during the initial growth of the Al metal electrode. This suggests that the Mn impurity level in the band gap of Al2O 3 layers plays an important role in resistive switching characteristics.

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Chemical-state-resolved depth profiles of Al/Pr_0.7Ca _0.3MnO₃ stacked structures for application in resistive switching devices

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