Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy

M. Oshima; S. Toyoda; J. Okabayashi; H. Kumigashira; K. Ono; M. Niwa; K. Usuda; N. Hirashita

doi:10.1116/1.1635389

Chemical states and band offsets of NH₃-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy

M. Oshima, S. Toyoda, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, N. Hirashita

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Ultrathin SiON films formed by thermal nitridation of SiO₂ films were investigated. High-resolution angle-resolved photoelectron spectroscopy was used to investigate the interfacial chemistry of the films. The second-nearest-neighbor effect in the chemical shift was also taken into account. The valence-band offsets of the films were determined to be 4.4 eV.

Original language	English
Pages (from-to)	176-180
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	1
DOIs	https://doi.org/10.1116/1.1635389
Publication status	Published - 2004 Jan

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abstract = "Ultrathin SiON films formed by thermal nitridation of SiO2 films were investigated. High-resolution angle-resolved photoelectron spectroscopy was used to investigate the interfacial chemistry of the films. The second-nearest-neighbor effect in the chemical shift was also taken into account. The valence-band offsets of the films were determined to be 4.4 eV.",

author = "M. Oshima and S. Toyoda and J. Okabayashi and H. Kumigashira and K. Ono and M. Niwa and K. Usuda and N. Hirashita",

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AU - Oshima, M.

AU - Toyoda, S.

AU - Okabayashi, J.

AU - Kumigashira, H.

AU - Ono, K.

AU - Niwa, M.

AU - Usuda, K.

AU - Hirashita, N.

PY - 2004/1

Y1 - 2004/1

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AB - Ultrathin SiON films formed by thermal nitridation of SiO2 films were investigated. High-resolution angle-resolved photoelectron spectroscopy was used to investigate the interfacial chemistry of the films. The second-nearest-neighbor effect in the chemical shift was also taken into account. The valence-band offsets of the films were determined to be 4.4 eV.

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JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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ER -

Chemical states and band offsets of NH₃-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy

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