Chemical trend of Fermi-level shift in transition metal-doped TiO 2 films

Yuji Matsumoto, Masao Katayama, Takatoshi Abe, Takeo Ohsawa, Isao Ohkubo, Hiroshi Kumigashira, Masaharu Oshima, Hideomi Koinuma

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The effect of doping a wide range of transition metals (TMs) including V, Cr, Mn, Fe, Co, and Ni into rutile TiO2 films grown on Nb-doped TiO2(110) single-crystal substrates was investigated by photoemission spectroscopy and X-ray absorption spectroscopy. For all TM-doped TiO 2 films, the Ti 2p and O 1s core levels were similarly shifted to lower binding energies with increasing film thickness and the shifts were similarly saturated at a film thickness of about 15 nm. These peak shifts could be interpreted in terms of the Fermi level shift, indicating that dopants trap excess electrons from the Ti 3d band like acceptors. The present systematic data revealed that the magnitude of the saturated Fermi level shift correlates well with the effective charge transfer energy.

Original languageEnglish
Pages (from-to)993-996
Number of pages4
JournalJournal of the Ceramic Society of Japan
Issue number1383
Publication statusPublished - 2010 Nov
Externally publishedYes


  • Combinatorial laser MBE
  • Impurity doping
  • Photoemission
  • Synchrotron radiation
  • Titanium dioxide
  • Transition metal
  • X-ray absorption spectroscopy

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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