Chemical vapor déposition of cu film on sic2 using cyclopentadienylcoppertriethylphosphine

Shigefusa Chichibu, Nobuhide Yoshida, Hirofumi Higuchi, Satoru Matsumoto

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11 Citations (Scopus)


Chemical vapor déposition of Cu film on Si02 has been studied using cyclopentadienylcoppertriethylphosphine (C5H5CuP(C2H5)3), which contains no oxygen atom itself. The deposited Cu films had complété (111) preferred orientation for déposition températures below 450°C. From Auger électron spectroscopy measurements, no simultaneous incorporation of oxygen during the déposition has been confirmed. Relatively low température déposition is préférable to reduce the condensation of deposited Cu.

Original languageEnglish
Pages (from-to)L1778-L1780
JournalJapanese Journal of Applied Physics
Issue number12
Publication statusPublished - 1992 Dec


  • Cu-CVD
  • Cyclopentadienylcoppertriethylphosphine
  • Metallization technique
  • Metalorganic precur-sor
  • Pyrolysis


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