TY - JOUR
T1 - Chemical vapor déposition of cu film on sic2 using cyclopentadienylcoppertriethylphosphine
AU - Chichibu, Shigefusa
AU - Yoshida, Nobuhide
AU - Higuchi, Hirofumi
AU - Matsumoto, Satoru
PY - 1992/12
Y1 - 1992/12
N2 - Chemical vapor déposition of Cu film on Si02 has been studied using cyclopentadienylcoppertriethylphosphine (C5H5CuP(C2H5)3), which contains no oxygen atom itself. The deposited Cu films had complété (111) preferred orientation for déposition températures below 450°C. From Auger électron spectroscopy measurements, no simultaneous incorporation of oxygen during the déposition has been confirmed. Relatively low température déposition is préférable to reduce the condensation of deposited Cu.
AB - Chemical vapor déposition of Cu film on Si02 has been studied using cyclopentadienylcoppertriethylphosphine (C5H5CuP(C2H5)3), which contains no oxygen atom itself. The deposited Cu films had complété (111) preferred orientation for déposition températures below 450°C. From Auger électron spectroscopy measurements, no simultaneous incorporation of oxygen during the déposition has been confirmed. Relatively low température déposition is préférable to reduce the condensation of deposited Cu.
KW - Cu-CVD
KW - Cyclopentadienylcoppertriethylphosphine
KW - Metallization technique
KW - Metalorganic precur-sor
KW - Pyrolysis
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U2 - 10.1143/JJAP.31.L1778
DO - 10.1143/JJAP.31.L1778
M3 - Article
AN - SCOPUS:0026974542
SN - 0021-4922
VL - 31
SP - L1778-L1780
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 12
ER -