Abstract
The chemisorption of atomic hydrogen on the silicon (111) 7 × 7 surface has been studied using ionneutralization spectroscopy and ultraviolet-photoemission spectroscopy with the help of low-energy electron diffraction and work-function measurement. Both spectroscopies showed that the dangling-bond surface state disappears when the clean surface is exposed to atomic hydrogen. Chemisorbed hydrogen produces two sharp peaks in the surface density of states at approximately -10 and -12 eV from the vacuum level. These results are in good quantitative agreement with the recent theoretical works by Appelbaum and Hamann and by Pandey.
| Original language | English |
|---|---|
| Pages (from-to) | 5349-5354 |
| Number of pages | 6 |
| Journal | Physical Review B |
| Volume | 12 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1975 |
ASJC Scopus subject areas
- Condensed Matter Physics