Chemistry and band offsets of HfO2 thin films for gate insulators

M. Oshima; S. Toyoda; T. Okumura; J. Okabayashi; H. Kumigashira; K. Ono; M. Niwa; K. Usuda; N. Hirashita

doi:10.1063/1.1611272

Chemistry and band offsets of HfO₂ thin films for gate insulators

M. Oshima, S. Toyoda, T. Okumura, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, N. Hirashita

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

Interfacial chemistry and band offsets of HfO₂ films grown on Si(100) substrates were investigated using high resolution angle-resolved photoelectron spectroscopy. Hf 4f and O 1 s spectra showed chemical shifts indicating the existence of a double layer structure consisting of an upper HfO₂ layer and SiO₂-rich Hf_1-xSi _xO₂ lower layer. Two types of valence band offsets were determined by a double subtraction method to be 3.0 and 3.8 eV.

Original language	English
Pages (from-to)	2172-2174
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	11
DOIs	https://doi.org/10.1063/1.1611272
Publication status	Published - 2003 Sept 15

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AU - Oshima, M.

AU - Toyoda, S.

AU - Okumura, T.

AU - Okabayashi, J.

AU - Kumigashira, H.

AU - Ono, K.

AU - Niwa, M.

AU - Usuda, K.

AU - Hirashita, N.

PY - 2003/9/15

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N2 - Interfacial chemistry and band offsets of HfO2 films grown on Si(100) substrates were investigated using high resolution angle-resolved photoelectron spectroscopy. Hf 4f and O 1 s spectra showed chemical shifts indicating the existence of a double layer structure consisting of an upper HfO2 layer and SiO2-rich Hf1-xSi xO2 lower layer. Two types of valence band offsets were determined by a double subtraction method to be 3.0 and 3.8 eV.

AB - Interfacial chemistry and band offsets of HfO2 films grown on Si(100) substrates were investigated using high resolution angle-resolved photoelectron spectroscopy. Hf 4f and O 1 s spectra showed chemical shifts indicating the existence of a double layer structure consisting of an upper HfO2 layer and SiO2-rich Hf1-xSi xO2 lower layer. Two types of valence band offsets were determined by a double subtraction method to be 3.0 and 3.8 eV.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Chemistry and band offsets of HfO₂ thin films for gate insulators

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