Chemistry and band offsets of HfO2 thin films for gate insulators

M. Oshima, S. Toyoda, T. Okumura, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, N. Hirashita

Research output: Contribution to journalArticlepeer-review

72 Citations (Scopus)


Interfacial chemistry and band offsets of HfO2 films grown on Si(100) substrates were investigated using high resolution angle-resolved photoelectron spectroscopy. Hf 4f and O 1 s spectra showed chemical shifts indicating the existence of a double layer structure consisting of an upper HfO2 layer and SiO2-rich Hf1-xSi xO2 lower layer. Two types of valence band offsets were determined by a double subtraction method to be 3.0 and 3.8 eV.

Original languageEnglish
Pages (from-to)2172-2174
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2003 Sept 15


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