TY - JOUR
T1 - Chemistry and band offsets of HfO2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy
AU - Toyoda, S.
AU - Okabayashi, J.
AU - Kumigashira, H.
AU - Oshima, M.
AU - Ono, K.
AU - Niwa, M.
AU - Usuda, K.
AU - Hirashita, N.
N1 - Funding Information:
The authors are indebted to Dr. K. Yamamoto of Matsushita Electric Industrial Co., Ltd., for providing HfO 2 samples. This work was supported by Semiconductor Technology Academic Research Center (STARC). This work was done under Project No. 2002S2-002 at the Institute of Material Structure Science in KEK.
PY - 2004/7
Y1 - 2004/7
N2 - High-resolution photoelectron spectroscopy and x-ray absorption spectroscopy (XAS) measurements have been performed on HfO2 films grown on Si(0 0 1) for ULSI ultra-thin gate insulators to elucidate the chemistry and band offsets of interfacial silicate layers. The valence-band discontinuity is determined by subtracting valence-band spectra of H-terminated Si(0 0 1) from those of the HfO2 films on Si which have a HfO 2/Hf1-xSixO2/Si double layer structure. On the other hand, the conduction-band discontinuity is clearly deduced by oxygen K-edge absorption spectra and O 1s photoelectron spectra. Consequently, two kinds of energy-band offsets of HfO2/Hf 1-xSixO2 and Hf1-xSi xO2/Si are determined separately.
AB - High-resolution photoelectron spectroscopy and x-ray absorption spectroscopy (XAS) measurements have been performed on HfO2 films grown on Si(0 0 1) for ULSI ultra-thin gate insulators to elucidate the chemistry and band offsets of interfacial silicate layers. The valence-band discontinuity is determined by subtracting valence-band spectra of H-terminated Si(0 0 1) from those of the HfO2 films on Si which have a HfO 2/Hf1-xSixO2/Si double layer structure. On the other hand, the conduction-band discontinuity is clearly deduced by oxygen K-edge absorption spectra and O 1s photoelectron spectra. Consequently, two kinds of energy-band offsets of HfO2/Hf 1-xSixO2 and Hf1-xSi xO2/Si are determined separately.
KW - Band offsets
KW - Gate insulator
KW - HfO
KW - Photoelectron spectroscopy
KW - X-ray absorption spectroscopy
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U2 - 10.1016/j.elspec.2004.02.083
DO - 10.1016/j.elspec.2004.02.083
M3 - Article
AN - SCOPUS:2942570078
SN - 0368-2048
VL - 137-140
SP - 141
EP - 144
JO - Journal of Electron Spectroscopy and Related Phenomena
JF - Journal of Electron Spectroscopy and Related Phenomena
IS - SPEC. ISS.
ER -