Cluster-preforming-deposited amorphous WSin (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact

Naoya Okada; Noriyuki Uchida; Sinichi Ogawa; Kazuhiko Endo; Toshihiko Kanayama

doi:10.1109/IEDM.2017.8268442

Cluster-preforming-deposited amorphous WSi_n (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact

Naoya Okada, Noriyuki Uchida, Sinichi Ogawa, Kazuhiko Endo, Toshihiko Kanayama

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The insertion of an amorphous WSi_n (n = 12) film composed of W-atom-encapsulated Sin cage clusters is demonstrated to reduce the SBH to 0.32 eV at W/n-Si and to 0.51 eV at W/Ge/p-Si junctions, while significantly extending the estimated TDDB lifetime to > 10 years at 100 °C under 5 MV/cm stress for Cu MOS capacitors. This film was formed with an excellent contact hole coverage by using WF₆ and SiH₄ gas sources in a hot-wall thermal reactor. These film properties enable the direct Cu contact at S/D in CMOS.

Original language	English
Title of host publication	2017 IEEE International Electron Devices Meeting, IEDM 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	22.5.1-22.5.4
ISBN (Electronic)	9781538635599
DOIs	https://doi.org/10.1109/IEDM.2017.8268442
Publication status	Published - 2018 Jan 23
Event	63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: 2017 Dec 2 → 2017 Dec 6

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/Territory	United States
City	San Francisco
Period	17/12/2 → 17/12/6

Access to Document

10.1109/IEDM.2017.8268442

Cite this

Okada, N., Uchida, N., Ogawa, S., Endo, K., & Kanayama, T. (2018). Cluster-preforming-deposited amorphous WSi_n (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 22.5.1-22.5.4). (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268442

Okada, Naoya ; Uchida, Noriyuki ; Ogawa, Sinichi et al. / Cluster-preforming-deposited amorphous WSi_n (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact. 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 22.5.1-22.5.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Cluster-preforming-deposited amorphous WSin (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact",

abstract = "The insertion of an amorphous WSin (n = 12) film composed of W-atom-encapsulated Sin cage clusters is demonstrated to reduce the SBH to 0.32 eV at W/n-Si and to 0.51 eV at W/Ge/p-Si junctions, while significantly extending the estimated TDDB lifetime to > 10 years at 100 °C under 5 MV/cm stress for Cu MOS capacitors. This film was formed with an excellent contact hole coverage by using WF6 and SiH4 gas sources in a hot-wall thermal reactor. These film properties enable the direct Cu contact at S/D in CMOS.",

author = "Naoya Okada and Noriyuki Uchida and Sinichi Ogawa and Kazuhiko Endo and Toshihiko Kanayama",

note = "Funding Information: ACKNOWLEDGMENT The authors wish to thank Y. Kashiwagi, T. Morimoto and G. Nakamura of Tokyo Electron (TEL) Ltd. for providing us with the hole array samples. We appreciate the AIST SCR station for the He ion microscope observations. This study was supported by JST PRESTO No. JPMJPR1326. Publisher Copyright: {\textcopyright} 2017 IEEE.; 63rd IEEE International Electron Devices Meeting, IEDM 2017 ; Conference date: 02-12-2017 Through 06-12-2017",

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Okada, N, Uchida, N, Ogawa, S, Endo, K & Kanayama, T 2018, Cluster-preforming-deposited amorphous WSi_n (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact. in 2017 IEEE International Electron Devices Meeting, IEDM 2017. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 22.5.1-22.5.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, United States, 17/12/2. https://doi.org/10.1109/IEDM.2017.8268442

Cluster-preforming-deposited amorphous WSi_n (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact. / Okada, Naoya; Uchida, Noriyuki; Ogawa, Sinichi et al.
2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 22.5.1-22.5.4 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N1 - Funding Information: ACKNOWLEDGMENT The authors wish to thank Y. Kashiwagi, T. Morimoto and G. Nakamura of Tokyo Electron (TEL) Ltd. for providing us with the hole array samples. We appreciate the AIST SCR station for the He ion microscope observations. This study was supported by JST PRESTO No. JPMJPR1326. Publisher Copyright: © 2017 IEEE.

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N2 - The insertion of an amorphous WSin (n = 12) film composed of W-atom-encapsulated Sin cage clusters is demonstrated to reduce the SBH to 0.32 eV at W/n-Si and to 0.51 eV at W/Ge/p-Si junctions, while significantly extending the estimated TDDB lifetime to > 10 years at 100 °C under 5 MV/cm stress for Cu MOS capacitors. This film was formed with an excellent contact hole coverage by using WF6 and SiH4 gas sources in a hot-wall thermal reactor. These film properties enable the direct Cu contact at S/D in CMOS.

AB - The insertion of an amorphous WSin (n = 12) film composed of W-atom-encapsulated Sin cage clusters is demonstrated to reduce the SBH to 0.32 eV at W/n-Si and to 0.51 eV at W/Ge/p-Si junctions, while significantly extending the estimated TDDB lifetime to > 10 years at 100 °C under 5 MV/cm stress for Cu MOS capacitors. This film was formed with an excellent contact hole coverage by using WF6 and SiH4 gas sources in a hot-wall thermal reactor. These film properties enable the direct Cu contact at S/D in CMOS.

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Okada N, Uchida N, Ogawa S, Endo K, Kanayama T. Cluster-preforming-deposited amorphous WSi_n (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact. In 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 22.5.1-22.5.4. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2017.8268442