TY - JOUR
T1 - Co and CoTix for contact plug and barrier layer in integrated circuits
AU - Hosseini, Maryamsadat
AU - Ando, Daisuke
AU - Sutou, Yuji
AU - Koike, Junichi
N1 - Funding Information:
The authors would like to thank Dr. Kosei Kobayashi at Tohoku University for his kind help with preparing FIB samples and HRTEM observation. We also thank Drs. Reza Arghavani, Larry Zhao, Steven C. Lai, and Yezdi Dordi at Lam Research Corporation for fruitful discussion. This work was supported by JSPS KAKENHI Grant Number JP15H02307 and by Lam Research Corporation .
Funding Information:
The authors would like to thank Dr. Kosei Kobayashi at Tohoku University for his kind help with preparing FIB samples and HRTEM observation. We also thank Drs. Reza Arghavani, Larry Zhao, Steven C. Lai, and Yezdi Dordi at Lam Research Corporation for fruitful discussion. This work was supported by JSPS KAKENHI Grant Number JP15H02307 and by Lam Research Corporation.
Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2018/4/5
Y1 - 2018/4/5
N2 - Continuous transistor scaling in integrated circuits brings about a significant increase of electrical resistance in the source/drain area. To alleviate the problem, this paper proposes Co/CoTix to replace conventional contact plug/barrier materials of W/TiN/Ti. Co and CoTix amorphous alloy layers were deposited on SiO2/p-Si. The 3 nm-thick amorphous CoTix layer promoted adhesion between Co and SiO2. The resistivity of the 150 nm-thick Co film on CoTix showed low film resistivity close to bulk Co value both in as-deposited and annealed conditions. The amorphous structure of the CoTix layer was maintained throughout annealing up to 500 °C. Capacitance-voltage measurement of Co/CoTix/SiO2/p-Si samples showed a good diffusion barrier property of the CoTix layer between Co and SiO2 after thermal stress as well as bias thermal stress. The obtained results indicated that Co/CoTix can be good candidate materials for contact plug and diffusion barrier in advanced integrated circuits.
AB - Continuous transistor scaling in integrated circuits brings about a significant increase of electrical resistance in the source/drain area. To alleviate the problem, this paper proposes Co/CoTix to replace conventional contact plug/barrier materials of W/TiN/Ti. Co and CoTix amorphous alloy layers were deposited on SiO2/p-Si. The 3 nm-thick amorphous CoTix layer promoted adhesion between Co and SiO2. The resistivity of the 150 nm-thick Co film on CoTix showed low film resistivity close to bulk Co value both in as-deposited and annealed conditions. The amorphous structure of the CoTix layer was maintained throughout annealing up to 500 °C. Capacitance-voltage measurement of Co/CoTix/SiO2/p-Si samples showed a good diffusion barrier property of the CoTix layer between Co and SiO2 after thermal stress as well as bias thermal stress. The obtained results indicated that Co/CoTix can be good candidate materials for contact plug and diffusion barrier in advanced integrated circuits.
KW - Cobalt
KW - Contact plug
KW - Diffusion barrier
KW - Metal-oxide-semiconductor (MOS)
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U2 - 10.1016/j.mee.2017.12.017
DO - 10.1016/j.mee.2017.12.017
M3 - Article
AN - SCOPUS:85039945937
SN - 0167-9317
VL - 189
SP - 78
EP - 84
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -