@article{94e16b46fc734484aafbcac1fdb132bd,
title = "Co-doping effect of nanoscale C and SiC on MgB2superconductor",
abstract = "MgB2 was thought as a promising superconductor used at temperatures around 20 K for cryogen-free magnet. Nanostructure materials were often selected as MgB2 additives due to their high chemical reactivity. In this paper, the mixture of nano-C and nano-SiC was doped to MgB2 bulks and tapes. The co-doping effect of C and SiC on the phase formation, microstructure, and critical current density of MgB2 bulks and tapes were systematically investigated. The mechanisms for the superconducting properties improvement in co-doped MgB2 superconductor was analyzed based on the characterization and measuring results.",
keywords = "Co-doping, Critical current property, Flux pinning, MgB",
author = "Xianping Zhang and Ma Yanwei and Dongliang Wang and Zhaoshun Gao and Lei Wang and Yanpeng Qi and Satoshi Awaji and Kazuo Watanabe and Dongning Zheng",
note = "Funding Information: Manuscript received August 15, 2008. First published June 05, 2009; current version published July 15, 2009. This work was supported in part by the National Nature Science Foundation of China under Grants 50472063 and 50802093 and in part by the National “973” Program Grant 2006CB601004. X. Zhang, Y. Ma, D. Wang, Z. Gao, L. Wang, and Y. Qi are with the Applied Superconductivity Lab, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China (e-mail: zxp@mail.iee.ac.cn). S. Awaji and K. Watanabe are with the Institute for Materials Research, To-hoku University, Sendai 980-8577, Japan. D. Zheng is with the Institute of Physics, Chinese Academy of Sciences, Beijing, China. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TASC.2009.2018027",
year = "2009",
month = jun,
doi = "10.1109/TASC.2009.2018027",
language = "English",
volume = "19",
pages = "2694--2697",
journal = "IEEE Transactions on Applied Superconductivity",
issn = "1051-8223",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}