Co-Pt-Cr-CoSi-CoO sintered target for low Ar-gas-pressure deposition of CoPtCr-SiO2 granular film with stoichiometric SiO2 phase

Shingo Sasaki; Shin Saito; Migaku Takahashi

doi:10.1109/TMAG.2013.2274050

Co-Pt-Cr-CoSi-CoO sintered target for low Ar-gas-pressure deposition of CoPtCr-SiO₂ granular film with stoichiometric SiO₂ phase

Shingo Sasaki, Shin Saito, Migaku Takahashi

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A new type of composite target is proposed for low Ar-gas-pressure (P _Ar) deposition of CoPtCr-SiO₂ granular perpendicular magnetic recording media. The proposed target is a Co-Pt-Cr-CoSi-enriched CoO sintered target, consisting of CoSi and CoO powders instead of SiO₂ powder. Systematic analysis of film composition, microstructure, and magnetic properties of the granular films revealed that 1) the Co₇₄ Pt ₁₆ Cr₁₀-8 mol% SiO₂ granular film with O/Si ratio of 2 in the film is realized by using a CoO/CoSi ratio of 3 in the target for our sputtering system, and 2) media with S = 1, H_c = 5.0 kOe, and α = 2.9 was realized even under a low P_Ar of 0.6 Pa. This means that just the oxidization of Si into SiO₂ is important for magnetic decoupling.

Original language	English
Article number	6563114
Pages (from-to)	5603-5609
Number of pages	7
Journal	IEEE Transactions on Magnetics
Volume	49
Issue number	12
DOIs	https://doi.org/10.1109/TMAG.2013.2274050
Publication status	Published - 2013 Dec

Keywords

CoPtCr-SiO
information storage
perpendicular magnetic recording
thin film

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title = "Co-Pt-Cr-CoSi-CoO sintered target for low Ar-gas-pressure deposition of CoPtCr-SiO2 granular film with stoichiometric SiO2 phase",

abstract = "A new type of composite target is proposed for low Ar-gas-pressure (P Ar) deposition of CoPtCr-SiO2 granular perpendicular magnetic recording media. The proposed target is a Co-Pt-Cr-CoSi-enriched CoO sintered target, consisting of CoSi and CoO powders instead of SiO2 powder. Systematic analysis of film composition, microstructure, and magnetic properties of the granular films revealed that 1) the Co74 Pt 16 Cr10-8 mol% SiO2 granular film with O/Si ratio of 2 in the film is realized by using a CoO/CoSi ratio of 3 in the target for our sputtering system, and 2) media with S = 1, Hc = 5.0 kOe, and α = 2.9 was realized even under a low PAr of 0.6 Pa. This means that just the oxidization of Si into SiO2 is important for magnetic decoupling.",

keywords = "CoPtCr-SiO, information storage, perpendicular magnetic recording, thin film",

author = "Shingo Sasaki and Shin Saito and Migaku Takahashi",

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T1 - Co-Pt-Cr-CoSi-CoO sintered target for low Ar-gas-pressure deposition of CoPtCr-SiO2 granular film with stoichiometric SiO2 phase

AU - Sasaki, Shingo

AU - Saito, Shin

AU - Takahashi, Migaku

PY - 2013/12

Y1 - 2013/12

N2 - A new type of composite target is proposed for low Ar-gas-pressure (P Ar) deposition of CoPtCr-SiO2 granular perpendicular magnetic recording media. The proposed target is a Co-Pt-Cr-CoSi-enriched CoO sintered target, consisting of CoSi and CoO powders instead of SiO2 powder. Systematic analysis of film composition, microstructure, and magnetic properties of the granular films revealed that 1) the Co74 Pt 16 Cr10-8 mol% SiO2 granular film with O/Si ratio of 2 in the film is realized by using a CoO/CoSi ratio of 3 in the target for our sputtering system, and 2) media with S = 1, Hc = 5.0 kOe, and α = 2.9 was realized even under a low PAr of 0.6 Pa. This means that just the oxidization of Si into SiO2 is important for magnetic decoupling.

AB - A new type of composite target is proposed for low Ar-gas-pressure (P Ar) deposition of CoPtCr-SiO2 granular perpendicular magnetic recording media. The proposed target is a Co-Pt-Cr-CoSi-enriched CoO sintered target, consisting of CoSi and CoO powders instead of SiO2 powder. Systematic analysis of film composition, microstructure, and magnetic properties of the granular films revealed that 1) the Co74 Pt 16 Cr10-8 mol% SiO2 granular film with O/Si ratio of 2 in the film is realized by using a CoO/CoSi ratio of 3 in the target for our sputtering system, and 2) media with S = 1, Hc = 5.0 kOe, and α = 2.9 was realized even under a low PAr of 0.6 Pa. This means that just the oxidization of Si into SiO2 is important for magnetic decoupling.

KW - CoPtCr-SiO

KW - information storage

KW - perpendicular magnetic recording

KW - thin film

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Co-Pt-Cr-CoSi-CoO sintered target for low Ar-gas-pressure deposition of CoPtCr-SiO₂ granular film with stoichiometric SiO₂ phase

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