CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions

H. Sato; M. Yamanouchi; K. Miura; S. Ikeda; R. Koizumi; F. Matsukura; H. Ohno

doi:10.1109/LMAG.2012.2190722

CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions

H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Abstract

Thermal stability factor Δ of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Δ is virtually independent of the junction sizes of 48-81 nm in diameter. The values of Δ increase linearly as the recording layer thickness increases. The slope of the linear fit is explained well by a model based on nucleation-type magnetization reversal.

Original language	English
Article number	6189858
Journal	IEEE Magnetics Letters
Volume	3
DOIs	https://doi.org/10.1109/LMAG.2012.2190722
Publication status	Published - 2012

Keywords

Spin electronics
magnetic random access memory
magnetic tunnel junctions (MTJs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1109/LMAG.2012.2190722

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title = "CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions",

abstract = "Thermal stability factor Δ of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Δ is virtually independent of the junction sizes of 48-81 nm in diameter. The values of Δ increase linearly as the recording layer thickness increases. The slope of the linear fit is explained well by a model based on nucleation-type magnetization reversal.",

keywords = "Spin electronics, magnetic random access memory, magnetic tunnel junctions (MTJs)",

author = "H. Sato and M. Yamanouchi and K. Miura and S. Ikeda and R. Koizumi and F. Matsukura and H. Ohno",

note = "Funding Information: This work was supported by the FIRST program of JSPS and GCOE at Tohoku University. The authors would like to thank R. Sasaki, I. Morita, T. Hirata, and H. Iwanuma for their technical support in MTJ fabrication.",

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doi = "10.1109/LMAG.2012.2190722",

language = "English",

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T1 - CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions

AU - Sato, H.

AU - Yamanouchi, M.

AU - Miura, K.

AU - Ikeda, S.

AU - Koizumi, R.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was supported by the FIRST program of JSPS and GCOE at Tohoku University. The authors would like to thank R. Sasaki, I. Morita, T. Hirata, and H. Iwanuma for their technical support in MTJ fabrication.

PY - 2012

Y1 - 2012

N2 - Thermal stability factor Δ of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Δ is virtually independent of the junction sizes of 48-81 nm in diameter. The values of Δ increase linearly as the recording layer thickness increases. The slope of the linear fit is explained well by a model based on nucleation-type magnetization reversal.

AB - Thermal stability factor Δ of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Δ is virtually independent of the junction sizes of 48-81 nm in diameter. The values of Δ increase linearly as the recording layer thickness increases. The slope of the linear fit is explained well by a model based on nucleation-type magnetization reversal.

KW - Spin electronics

KW - magnetic random access memory

KW - magnetic tunnel junctions (MTJs)

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CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions

Abstract

Keywords

ASJC Scopus subject areas

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