TY - GEN
T1 - Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature
AU - Boubanga-Tombet, Stephane
AU - Otsuji, Taiichi
AU - Teppe, Frederic
AU - Torres, Jeremy
AU - Knap, Wojciech
PY - 2011
Y1 - 2011
N2 - We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. Our results shows that properly exciting nanotransistors can pave the way for new class of coherent and easily tunable THz sources.
AB - We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. Our results shows that properly exciting nanotransistors can pave the way for new class of coherent and easily tunable THz sources.
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M3 - Conference contribution
AN - SCOPUS:80052136932
SN - 9781557529107
T3 - 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011
BT - 2011 Conference on Lasers and Electro-Optics
T2 - 2011 Conference on Lasers and Electro-Optics, CLEO 2011
Y2 - 1 May 2011 through 6 May 2011
ER -