Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses

Yongxun Liu; Takashi Matsukawa; Kazuhiko Endo; Meishoku Masahara; Shin Ichi O'uchi; Kenichi Ishii; Hiromi Yamauchi; Junichi Tsukada; Yuki Ishikawa; Eiichi Suzuki

doi:10.1109/LED.2007.896898

Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses

Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shin Ichi O'uchi, Kenichi Ishii, Hiromi Yamauchi, Junichi Tsukada, Yuki Ishikawa, Eiichi Suzuki

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Cointegration of titanium nitride (TiN)-gate high-performance tied-gate three-terminal FinFETs with symmetric gate-oxide thicknesses (t_ox1= t_ox2= 1.7 nm) and variable threshold-voltage V_th independent-gate four-terminal (4T) FinFETs with asymmetric gate-oxide thicknesses (T_ox1 = 1.7 nm for the driving-gate-oxide, and (t_ox2 = 3.4 or 7.0 nm for the control-gate-oxide) has been successfully developed using conventional reactive sputtering, two-step Si-fin and gate-oxide formation, and resist etch-back processes. A significantly improved subthreshold slope and an extremely low OFF-state current I_off are experimentally confirmed in the asymmetric gate-oxide thickness 4T FinFETs by increasing the control-gate-oxide thickness to twice or more the driving-gate-oxide thickness. The developed techniques are attractive for high-performance and low-power FinFET very large-scale integration circuits.

Original language	English
Pages (from-to)	517-519
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	6
DOIs	https://doi.org/10.1109/LED.2007.896898
Publication status	Published - 2007 Jun
Externally published	Yes

Keywords

Asymmetric gate-oxide thicknesses
Cointegration
Double-gate MOSFET
FinFET
Independent-gate FinFET
Threshold-voltage control
TiN gate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.896898

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Liu, Y., Matsukawa, T., Endo, K., Masahara, M., O'uchi, S. I., Ishii, K., Yamauchi, H., Tsukada, J., Ishikawa, Y., & Suzuki, E. (2007). Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses. IEEE Electron Device Letters, 28(6), 517-519. https://doi.org/10.1109/LED.2007.896898

Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses. / Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko et al.

In: IEEE Electron Device Letters, Vol. 28, No. 6, 06.2007, p. 517-519.

Research output: Contribution to journal › Article › peer-review

Liu, Y, Matsukawa, T, Endo, K, Masahara, M, O'uchi, SI, Ishii, K, Yamauchi, H, Tsukada, J, Ishikawa, Y & Suzuki, E 2007, 'Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses', IEEE Electron Device Letters, vol. 28, no. 6, pp. 517-519. https://doi.org/10.1109/LED.2007.896898

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abstract = "Cointegration of titanium nitride (TiN)-gate high-performance tied-gate three-terminal FinFETs with symmetric gate-oxide thicknesses (tox1= tox2= 1.7 nm) and variable threshold-voltage Vth independent-gate four-terminal (4T) FinFETs with asymmetric gate-oxide thicknesses (Tox1 = 1.7 nm for the driving-gate-oxide, and (tox2 = 3.4 or 7.0 nm for the control-gate-oxide) has been successfully developed using conventional reactive sputtering, two-step Si-fin and gate-oxide formation, and resist etch-back processes. A significantly improved subthreshold slope and an extremely low OFF-state current Ioff are experimentally confirmed in the asymmetric gate-oxide thickness 4T FinFETs by increasing the control-gate-oxide thickness to twice or more the driving-gate-oxide thickness. The developed techniques are attractive for high-performance and low-power FinFET very large-scale integration circuits.",

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author = "Yongxun Liu and Takashi Matsukawa and Kazuhiko Endo and Meishoku Masahara and O'uchi, {Shin Ichi} and Kenichi Ishii and Hiromi Yamauchi and Junichi Tsukada and Yuki Ishikawa and Eiichi Suzuki",

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Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses

Abstract

Keywords

ASJC Scopus subject areas

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