@inproceedings{a6d1247e439c443e895bf5463b0051e3,
title = "Collective tunneling model between two-dimensional electron gas to Si-Nano Dot",
abstract = "We study the temperature dependence of electron injection voltage in Si-Nano-Dot (Si-NDs) Floating Gate MOS capacitor by using the collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the temperature dependence by numerical calculation, which emulate the experiment in this system, and we obtained a new insight into the origin of the temperature dependence. We have revealed that the collective tunneling model can reproduce the temperature dependence of electron tunneling.",
keywords = "Collective Motion of Electron, Electron Dynamics, Quantum Dot, Si-Nano Dot, Tunneling",
author = "Masakazu Muraguchi and Y. Sakurai and Y. Takada and S. Nomura and K. Shiraishi and K. Makihara and M. Ikeda and S. Miyazaki and Y. Shigeta and Tetsuo Endoh",
year = "2011",
month = dec,
day = "1",
doi = "10.1063/1.3666370",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "295--296",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}