TY - GEN
T1 - Comb-drive XYZ-microstage based on assembling technology for low temperature measurement systems
AU - Xue, Gaopeng
AU - Toda, Masaya
AU - Ono, Takahito
N1 - Publisher Copyright:
© 2015 The Japan Institute of Electronics Packaging.
PY - 2015/5/20
Y1 - 2015/5/20
N2 - This paper reports the novel design, fabrication and testing of a chip-level-assembled comb-drive XYZ-microstage that produces large displacements into X-, Y-, and Z-directions for the three-dimensional scanning stage of magnetic resonance force microscopy. The main parts of the XYZ-microstage, consisting of a comb-drive XY-microstage, two comb-drive Z-microstages and a bottom silicon base substrate, are assembled together by using micro manipulators. Mechanical springs are used to realize the electrical connections between the XY-microstage and the Z-microstages. It is demonstrated that the assembled XYZ-microstage can achieve large displacements of 25.2 μm in X direction, 20.4 μm in Y direction and 58.5 μm in Z direction. Also, the fabricated Z-microstage integrated with capacitive displacement sensors is installed into a vacuum chamber equipped with a liquid nitrogen cooling stage to evaluate the actuation performance at low temperatures. A maximum displacement of ∼60 μm without any degradation is obtained in the Z-microstage at 77.6 K.
AB - This paper reports the novel design, fabrication and testing of a chip-level-assembled comb-drive XYZ-microstage that produces large displacements into X-, Y-, and Z-directions for the three-dimensional scanning stage of magnetic resonance force microscopy. The main parts of the XYZ-microstage, consisting of a comb-drive XY-microstage, two comb-drive Z-microstages and a bottom silicon base substrate, are assembled together by using micro manipulators. Mechanical springs are used to realize the electrical connections between the XY-microstage and the Z-microstages. It is demonstrated that the assembled XYZ-microstage can achieve large displacements of 25.2 μm in X direction, 20.4 μm in Y direction and 58.5 μm in Z direction. Also, the fabricated Z-microstage integrated with capacitive displacement sensors is installed into a vacuum chamber equipped with a liquid nitrogen cooling stage to evaluate the actuation performance at low temperatures. A maximum displacement of ∼60 μm without any degradation is obtained in the Z-microstage at 77.6 K.
KW - Capacitive displacement sensor
KW - Chip-level microassembly technology
KW - Comb-drive XYZ-microstage
KW - Cryogenic measurement
KW - Electrical connections
KW - Large displacements
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U2 - 10.1109/ICEP-IAAC.2015.7111006
DO - 10.1109/ICEP-IAAC.2015.7111006
M3 - Conference contribution
AN - SCOPUS:84936145540
T3 - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
SP - 83
EP - 88
BT - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
Y2 - 14 April 2015 through 17 April 2015
ER -