Combinatorial exploration of flux material for Bi                         4                         Ti                          3                         O                         12                          single crystal film growth

R. Takahashi; Y. Yonezawa; M. Ohtani; M. Kawasaki; Y. Matsumoto; H. Koinuma

doi:10.1016/j.apsusc.2005.05.092

Combinatorial exploration of flux material for Bi ₄ Ti ₃ O ₁₂ single crystal film growth

R. Takahashi, Y. Yonezawa, M. Ohtani, M. Kawasaki, Y. Matsumoto, H. Koinuma

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi ₄ Ti ₃ O ₁₂ single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi ₂ O ₃ and Bi ₄ Ti ₃ O ₁₂ ) and an impurity flux (VO _x , WO _x , CuO _x , BiPO _x , BaO, MoO _x ) were fabricated on the SrTiO ₃ (0 0 1) substrates. Then, stoichiometric Bi ₄ Ti ₃ O ₁₂ was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi ₂ O ₃ , for Bi ₄ Ti ₃ O ₁₂ single crystal film.

Original language	English
Pages (from-to)	2477-2481
Number of pages	5
Journal	Applied Surface Science
Volume	252
Issue number	7
DOIs	https://doi.org/10.1016/j.apsusc.2005.05.092
Publication status	Published - 2006 Jan 21
Externally published	Yes
Event	Proceedings of the Third Japan-US Workshop on Combinatorial Material Science and Technology CMST-e SI - Duration: 2004 Dec 7 → 2004 Dec 10

Keywords

Bi Ti O
Combinatorial chemistry
Flux-mediated epitaxy
Oxide thin film
Pulsed laser deposition

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2005.05.092

Cite this

Takahashi, R., Yonezawa, Y., Ohtani, M., Kawasaki, M., Matsumoto, Y., & Koinuma, H. (2006). Combinatorial exploration of flux material for Bi ₄ Ti ₃ O ₁₂ single crystal film growth Applied Surface Science, 252(7), 2477-2481. https://doi.org/10.1016/j.apsusc.2005.05.092

Combinatorial exploration of flux material for Bi ₄ Ti ₃ O ₁₂ single crystal film growth . / Takahashi, R.; Yonezawa, Y.; Ohtani, M. et al.
In: Applied Surface Science, Vol. 252, No. 7, 21.01.2006, p. 2477-2481.

Research output: Contribution to journal › Conference article › peer-review

Takahashi, R, Yonezawa, Y, Ohtani, M, Kawasaki, M, Matsumoto, Y & Koinuma, H 2006, ' Combinatorial exploration of flux material for Bi ₄ Ti ₃ O ₁₂ single crystal film growth ', Applied Surface Science, vol. 252, no. 7, pp. 2477-2481. https://doi.org/10.1016/j.apsusc.2005.05.092

Takahashi R, Yonezawa Y, Ohtani M, Kawasaki M, Matsumoto Y, Koinuma H. Combinatorial exploration of flux material for Bi ₄ Ti ₃ O ₁₂ single crystal film growth Applied Surface Science. 2006 Jan 21;252(7):2477-2481. doi: 10.1016/j.apsusc.2005.05.092

Takahashi, R. ; Yonezawa, Y. ; Ohtani, M. et al. / Combinatorial exploration of flux material for Bi ₄ Ti ₃ O ₁₂ single crystal film growth In: Applied Surface Science. 2006 ; Vol. 252, No. 7. pp. 2477-2481.

@article{f418e9938b6f4c85841e8c81c1e8df31,

title = " Combinatorial exploration of flux material for Bi 4 Ti 3 O 12 single crystal film growth ",

abstract = " The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi 4 Ti 3 O 12 single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi 2 O 3 and Bi 4 Ti 3 O 12 ) and an impurity flux (VO x , WO x , CuO x , BiPO x , BaO, MoO x ) were fabricated on the SrTiO 3 (0 0 1) substrates. Then, stoichiometric Bi 4 Ti 3 O 12 was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi 2 O 3 , for Bi 4 Ti 3 O 12 single crystal film.",

keywords = "Bi Ti O, Combinatorial chemistry, Flux-mediated epitaxy, Oxide thin film, Pulsed laser deposition",

author = "R. Takahashi and Y. Yonezawa and M. Ohtani and M. Kawasaki and Y. Matsumoto and H. Koinuma",

note = "Funding Information: Two of the authors (R.T. and M.O.) are supported by JSPS Research Fellowships for Young Scientists. The authors would like to thank Miss J. Ishii, Mr. F. Togoh and Mr. A. Ueda of Fuji Electric Corporate R&D, Ltd., for technical support and fruitful discussions in the XPS measurements. ; Proceedings of the Third Japan-US Workshop on Combinatorial Material Science and Technology CMST-e SI ; Conference date: 07-12-2004 Through 10-12-2004",

year = "2006",

month = jan,

day = "21",

doi = "10.1016/j.apsusc.2005.05.092",

language = "English",

volume = "252",

pages = "2477--2481",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "7",

}

TY - JOUR

T1 - Combinatorial exploration of flux material for Bi 4 Ti 3 O 12 single crystal film growth

AU - Takahashi, R.

AU - Yonezawa, Y.

AU - Ohtani, M.

AU - Kawasaki, M.

AU - Matsumoto, Y.

AU - Koinuma, H.

N1 - Funding Information: Two of the authors (R.T. and M.O.) are supported by JSPS Research Fellowships for Young Scientists. The authors would like to thank Miss J. Ishii, Mr. F. Togoh and Mr. A. Ueda of Fuji Electric Corporate R&D, Ltd., for technical support and fruitful discussions in the XPS measurements.

PY - 2006/1/21

Y1 - 2006/1/21

N2 - The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi 4 Ti 3 O 12 single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi 2 O 3 and Bi 4 Ti 3 O 12 ) and an impurity flux (VO x , WO x , CuO x , BiPO x , BaO, MoO x ) were fabricated on the SrTiO 3 (0 0 1) substrates. Then, stoichiometric Bi 4 Ti 3 O 12 was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi 2 O 3 , for Bi 4 Ti 3 O 12 single crystal film.

AB - The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi 4 Ti 3 O 12 single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi 2 O 3 and Bi 4 Ti 3 O 12 ) and an impurity flux (VO x , WO x , CuO x , BiPO x , BaO, MoO x ) were fabricated on the SrTiO 3 (0 0 1) substrates. Then, stoichiometric Bi 4 Ti 3 O 12 was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi 2 O 3 , for Bi 4 Ti 3 O 12 single crystal film.

KW - Bi Ti O

KW - Combinatorial chemistry

KW - Flux-mediated epitaxy

KW - Oxide thin film

KW - Pulsed laser deposition

UR - http://www.scopus.com/inward/record.url?scp=31144434063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31144434063&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.05.092

DO - 10.1016/j.apsusc.2005.05.092

M3 - Conference article

AN - SCOPUS:31144434063

SN - 0169-4332

VL - 252

SP - 2477

EP - 2481

JO - Applied Surface Science

JF - Applied Surface Science

IS - 7

T2 - Proceedings of the Third Japan-US Workshop on Combinatorial Material Science and Technology CMST-e SI

Y2 - 7 December 2004 through 10 December 2004

ER -