TY - JOUR
T1 - Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering
AU - Matsumoto, Yuji
AU - Murakami, Makoto
AU - Jin, Zhengwu
AU - Ohtomo, Akira
AU - Lippmaa, Mikk
AU - Kawasaki, M.
AU - Koinuma, Hideomi
PY - 1999/6/15
Y1 - 1999/6/15
N2 - We have developed a new combinatorial synthesis system integrating a combinatorial shadow mask into a laser MBE (molecular beam epitaxy) chamber. This combinatorial Laser MBE system can be used for fabricating a number of crystalline films with different compositions on a substrate under programmed temperature and pressure conditions. The method was applied to alloying and band gap engineering of ZnO by positional substitution of Mg into ZnO thin films. The superiority of the combinatorial methodology to conventional one-by-one synthesis is evident from the high linearity of the c-axis length and band gap dependence on Mg content.
AB - We have developed a new combinatorial synthesis system integrating a combinatorial shadow mask into a laser MBE (molecular beam epitaxy) chamber. This combinatorial Laser MBE system can be used for fabricating a number of crystalline films with different compositions on a substrate under programmed temperature and pressure conditions. The method was applied to alloying and band gap engineering of ZnO by positional substitution of Mg into ZnO thin films. The superiority of the combinatorial methodology to conventional one-by-one synthesis is evident from the high linearity of the c-axis length and band gap dependence on Mg content.
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U2 - 10.1143/jjap.38.l603
DO - 10.1143/jjap.38.l603
M3 - Article
AN - SCOPUS:0032659122
SN - 0021-4922
VL - 38
SP - L603-L605
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6 A/B
ER -