Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO 2 for the advanced gate stack

K. S. Chang; M. L. Green; J. Suehle; E. M. Vogel; H. Xiong; J. Hattrick-Simpers; I. Takeuchi; O. Famodu; K. Ohmori; P. Ahmet; T. Chikyow; P. Majhi; B. H. Lee; M. Gardner

doi:10.1063/1.2357011

Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO ₂ for the advanced gate stack

K. S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, J. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B. H. Lee, M. Gardner

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The authors have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on Hf O2 using magnetron co-sputtering to investigate flatband voltage shift (Δ Vfb), work function (m), and leakage current density (JL) variations. A more negative Δ Vfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller m near the Ti-rich corners and higher m near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed m variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloy metal gate electrode systems.

Original language	English
Article number	142108
Journal	Applied Physics Letters
Volume	89
Issue number	14
DOIs	https://doi.org/10.1063/1.2357011
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Chang, K. S., Green, M. L., Suehle, J., Vogel, E. M., Xiong, H., Hattrick-Simpers, J., Takeuchi, I., Famodu, O., Ohmori, K., Ahmet, P., Chikyow, T., Majhi, P., Lee, B. H., & Gardner, M. (2006). Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO ₂ for the advanced gate stack. Applied Physics Letters, 89(14), [142108]. https://doi.org/10.1063/1.2357011

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title = "Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO 2 for the advanced gate stack",

abstract = "The authors have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on Hf O2 using magnetron co-sputtering to investigate flatband voltage shift (Δ Vfb), work function (m), and leakage current density (JL) variations. A more negative Δ Vfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller m near the Ti-rich corners and higher m near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed m variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloy metal gate electrode systems.",

author = "Chang, {K. S.} and Green, {M. L.} and J. Suehle and Vogel, {E. M.} and H. Xiong and J. Hattrick-Simpers and I. Takeuchi and O. Famodu and K. Ohmori and P. Ahmet and T. Chikyow and P. Majhi and Lee, {B. H.} and M. Gardner",

note = "Funding Information: The authors would like to thank Chris Long for assistance with the x-ray diffraction analysis. This research was partly supported by Japan Society for the promotion of Science, Core to Core program.This work was preformed in part at the NIST Center for Nanoscale Science and Technology's Nanofab facility in Gaithensburg, MD. ",

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doi = "10.1063/1.2357011",

language = "English",

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AU - Chang, K. S.

AU - Green, M. L.

AU - Suehle, J.

AU - Vogel, E. M.

AU - Xiong, H.

AU - Hattrick-Simpers, J.

AU - Takeuchi, I.

AU - Famodu, O.

AU - Ohmori, K.

AU - Ahmet, P.

AU - Chikyow, T.

AU - Majhi, P.

AU - Lee, B. H.

AU - Gardner, M.

N1 - Funding Information: The authors would like to thank Chris Long for assistance with the x-ray diffraction analysis. This research was partly supported by Japan Society for the promotion of Science, Core to Core program.This work was preformed in part at the NIST Center for Nanoscale Science and Technology's Nanofab facility in Gaithensburg, MD.

PY - 2006

Y1 - 2006

N2 - The authors have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on Hf O2 using magnetron co-sputtering to investigate flatband voltage shift (Δ Vfb), work function (m), and leakage current density (JL) variations. A more negative Δ Vfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller m near the Ti-rich corners and higher m near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed m variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloy metal gate electrode systems.

AB - The authors have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on Hf O2 using magnetron co-sputtering to investigate flatband voltage shift (Δ Vfb), work function (m), and leakage current density (JL) variations. A more negative Δ Vfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller m near the Ti-rich corners and higher m near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed m variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloy metal gate electrode systems.

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Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO ₂ for the advanced gate stack

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