High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV micro-bucnhed electron beam and a high intensity CO2 laser pulse. The electron beam extracted from a DC photocathode gun is micro-bunched using laser modulation techinque with the Compton wavelength at a harmonic of the seeding laser  before the main laser Compton scattering for EUV radiation. A considerating scheme for the compact EUV source based on laser Compton scattering with micro-bunched electron beam and the anaritical study of micro-bunch generation are described in this papar. A plan of test experiment generating micro-bunched electron beam will be also introduced in this conference.
|Number of pages
|Published - 2008
|11th European Particle Accelerator Conference, EPAC 2008 - Genoa, Italy
Duration: 2008 Jun 23 → 2008 Jun 27
|11th European Particle Accelerator Conference, EPAC 2008
|08/6/23 → 08/6/27