Compact triangulation distance sensor realized by wafer bending technique

Minoru Sasaki, Satoshi Endou, Kazuhiro Hane

Research output: Contribution to journalConference articlepeer-review


The triangulation distance sensor is constructed using the originally proposed wafer bending technique. Since the bending process is final in the fabrication sequence, the planer photolighography can be combined. On the Si wafer, the elements are pre-aligned at the unfolded planer condition. The position sensitive detector (PSD), mirror, and alignment pit for the collimation ball lens are prepared. The realized sensor substrate is 1.4mm in depth. Taking the advantage of the batch fabrication, 2×2 sensor array is prepared. The dynamic range of 4mm with ± 1 % noise is confirmed.

Original languageEnglish
Pages (from-to)19-26
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2004
EventMEM, MOEMS, and Micromachining - Strasbourg, France
Duration: 2004 Apr 292004 Apr 30


  • Prealignment
  • Three-dimensional structure
  • Triangulation distance sensor
  • Wafer bending technique


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