Compact triangulation distance sensor realized by wafer bending technique

Minoru Sasaki; Satoshi Endou; Kazuhiro Hane

doi:10.1117/12.545267

Compact triangulation distance sensor realized by wafer bending technique

Minoru Sasaki, Satoshi Endou, Kazuhiro Hane

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The triangulation distance sensor is constructed using the originally proposed wafer bending technique. Since the bending process is final in the fabrication sequence, the planer photolighography can be combined. On the Si wafer, the elements are pre-aligned at the unfolded planer condition. The position sensitive detector (PSD), mirror, and alignment pit for the collimation ball lens are prepared. The realized sensor substrate is 1.4mm in depth. Taking the advantage of the batch fabrication, 2×2 sensor array is prepared. The dynamic range of 4mm with ± 1 % noise is confirmed.

Original language	English
Pages (from-to)	19-26
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5455
DOIs	https://doi.org/10.1117/12.545267
Publication status	Published - 2004
Event	MEM, MOEMS, and Micromachining - Strasbourg, France Duration: 2004 Apr 29 → 2004 Apr 30

Keywords

Prealignment
Three-dimensional structure
Triangulation distance sensor
Wafer bending technique

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10.1117/12.545267

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title = "Compact triangulation distance sensor realized by wafer bending technique",

abstract = "The triangulation distance sensor is constructed using the originally proposed wafer bending technique. Since the bending process is final in the fabrication sequence, the planer photolighography can be combined. On the Si wafer, the elements are pre-aligned at the unfolded planer condition. The position sensitive detector (PSD), mirror, and alignment pit for the collimation ball lens are prepared. The realized sensor substrate is 1.4mm in depth. Taking the advantage of the batch fabrication, 2×2 sensor array is prepared. The dynamic range of 4mm with ± 1 % noise is confirmed.",

keywords = "Prealignment, Three-dimensional structure, Triangulation distance sensor, Wafer bending technique",

author = "Minoru Sasaki and Satoshi Endou and Kazuhiro Hane",

year = "2004",

doi = "10.1117/12.545267",

language = "English",

volume = "5455",

pages = "19--26",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "MEM, MOEMS, and Micromachining ; Conference date: 29-04-2004 Through 30-04-2004",

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TY - JOUR

T1 - Compact triangulation distance sensor realized by wafer bending technique

AU - Sasaki, Minoru

AU - Endou, Satoshi

AU - Hane, Kazuhiro

PY - 2004

Y1 - 2004

N2 - The triangulation distance sensor is constructed using the originally proposed wafer bending technique. Since the bending process is final in the fabrication sequence, the planer photolighography can be combined. On the Si wafer, the elements are pre-aligned at the unfolded planer condition. The position sensitive detector (PSD), mirror, and alignment pit for the collimation ball lens are prepared. The realized sensor substrate is 1.4mm in depth. Taking the advantage of the batch fabrication, 2×2 sensor array is prepared. The dynamic range of 4mm with ± 1 % noise is confirmed.

AB - The triangulation distance sensor is constructed using the originally proposed wafer bending technique. Since the bending process is final in the fabrication sequence, the planer photolighography can be combined. On the Si wafer, the elements are pre-aligned at the unfolded planer condition. The position sensitive detector (PSD), mirror, and alignment pit for the collimation ball lens are prepared. The realized sensor substrate is 1.4mm in depth. Taking the advantage of the batch fabrication, 2×2 sensor array is prepared. The dynamic range of 4mm with ± 1 % noise is confirmed.

KW - Prealignment

KW - Three-dimensional structure

KW - Triangulation distance sensor

KW - Wafer bending technique

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DO - 10.1117/12.545267

M3 - Conference article

AN - SCOPUS:8844244896

SN - 0277-786X

VL - 5455

SP - 19

EP - 26

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - MEM, MOEMS, and Micromachining

Y2 - 29 April 2004 through 30 April 2004

ER -

Compact triangulation distance sensor realized by wafer bending technique

Abstract

Keywords

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