Abstract
A comparative study of advanced MOSFET structures that have been proposed for around 0.1μm generation in the subjects of short-channel effect, drain saturation current, and relative gate delay, is carried out. The approach used emphasizes compact analytical models and parametric comparison. These heuristic and analytic models are guided by experimental and simulation data. Based on these models, key device design parameters are extracted and compared. Overall, the approach used provides good insight for device design, quick figure-of-merit, and a framework for analyzing a wide variety of MOSFETs.
| Original language | English |
|---|---|
| Pages (from-to) | 32-33 |
| Number of pages | 2 |
| Journal | Digest of Technical Papers - Symposium on VLSI Technology |
| Publication status | Published - 1996 Jan 1 |
| Externally published | Yes |
| Event | Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 1996 Jun 11 → 1996 Jun 13 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering