Comparative study of shallow acceptor levels in unintentionally doped p-type GaSe crystals prepared by the Bridgman and liquid phase solution growth methods

Yuki Nagai; Kensaku Maeda; Kohei Suzuki; Yutaka Oyama

doi:10.1007/s11664-014-3284-1

Comparative study of shallow acceptor levels in unintentionally doped p-type GaSe crystals prepared by the Bridgman and liquid phase solution growth methods

Yuki Nagai, Kensaku Maeda, Kohei Suzuki, Yutaka Oyama

IMR - Materials Property Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

GaSe crystals were grown by liquid phase solution growth, using the temperature difference method under controlled vapor pressure. Temperature-dependent Hall effect measurements were used to show the different thermal activation energies of the acceptor levels of the commercially available Bridgman-grown GaSe crystals and our liquid phase solution-grown crystals. Unintentionally doped GaSe crystals showed p-type conduction; also, the thermal activation energies of the acceptor levels of the Bridgman-grown crystals were 30 meV + E _v and 50 meV + E _v while that of liquid phase-grown crystals was 15 meV + E _v (where E _v is the energy of the valence band). We conclude that low temperature growth and stoichiometry control can effectively inhibit native point defect formation.

Original language	English
Pages (from-to)	3117-3120
Number of pages	4
Journal	Journal of Electronic Materials
Volume	43
Issue number	9
DOIs	https://doi.org/10.1007/s11664-014-3284-1
Publication status	Published - 2014 Sept

Keywords

accepter level
gallium selenide
nonlinear optical material
solution growth
stoichiometry control

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10.1007/s11664-014-3284-1

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title = "Comparative study of shallow acceptor levels in unintentionally doped p-type GaSe crystals prepared by the Bridgman and liquid phase solution growth methods",

abstract = "GaSe crystals were grown by liquid phase solution growth, using the temperature difference method under controlled vapor pressure. Temperature-dependent Hall effect measurements were used to show the different thermal activation energies of the acceptor levels of the commercially available Bridgman-grown GaSe crystals and our liquid phase solution-grown crystals. Unintentionally doped GaSe crystals showed p-type conduction; also, the thermal activation energies of the acceptor levels of the Bridgman-grown crystals were 30 meV + E v and 50 meV + E v while that of liquid phase-grown crystals was 15 meV + E v (where E v is the energy of the valence band). We conclude that low temperature growth and stoichiometry control can effectively inhibit native point defect formation.",

keywords = "accepter level, gallium selenide, nonlinear optical material, solution growth, stoichiometry control",

author = "Yuki Nagai and Kensaku Maeda and Kohei Suzuki and Yutaka Oyama",

note = "Funding Information: This work was partially supported by KAKENHI (23360025) of Grant-in-aid for Scientific Research (B).",

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T1 - Comparative study of shallow acceptor levels in unintentionally doped p-type GaSe crystals prepared by the Bridgman and liquid phase solution growth methods

AU - Nagai, Yuki

AU - Maeda, Kensaku

AU - Suzuki, Kohei

AU - Oyama, Yutaka

N1 - Funding Information: This work was partially supported by KAKENHI (23360025) of Grant-in-aid for Scientific Research (B).

PY - 2014/9

Y1 - 2014/9

N2 - GaSe crystals were grown by liquid phase solution growth, using the temperature difference method under controlled vapor pressure. Temperature-dependent Hall effect measurements were used to show the different thermal activation energies of the acceptor levels of the commercially available Bridgman-grown GaSe crystals and our liquid phase solution-grown crystals. Unintentionally doped GaSe crystals showed p-type conduction; also, the thermal activation energies of the acceptor levels of the Bridgman-grown crystals were 30 meV + E v and 50 meV + E v while that of liquid phase-grown crystals was 15 meV + E v (where E v is the energy of the valence band). We conclude that low temperature growth and stoichiometry control can effectively inhibit native point defect formation.

AB - GaSe crystals were grown by liquid phase solution growth, using the temperature difference method under controlled vapor pressure. Temperature-dependent Hall effect measurements were used to show the different thermal activation energies of the acceptor levels of the commercially available Bridgman-grown GaSe crystals and our liquid phase solution-grown crystals. Unintentionally doped GaSe crystals showed p-type conduction; also, the thermal activation energies of the acceptor levels of the Bridgman-grown crystals were 30 meV + E v and 50 meV + E v while that of liquid phase-grown crystals was 15 meV + E v (where E v is the energy of the valence band). We conclude that low temperature growth and stoichiometry control can effectively inhibit native point defect formation.

KW - accepter level

KW - gallium selenide

KW - nonlinear optical material

KW - solution growth

KW - stoichiometry control

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Comparative study of shallow acceptor levels in unintentionally doped p-type GaSe crystals prepared by the Bridgman and liquid phase solution growth methods

Abstract

Keywords

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