Abstract
We performed a comparative study of strain fluctuation in strained-Si grown on SiGe-on-insulator (SGOI) and SiGe virtual substrates, and clarified the origin of the strain fluctuation in the strained-Si layer. A periodic strain fluctuation, which reflects the strain field of underlying cross-hatch pattern, was observed in the sample on the virtual substrate. On the other hand, a feature-less strain fluctuation with suppressed amplitude was observed in the sample on SGOI substrate. By analyzing the correlation of the Raman peak positions of the Si-Si mode in strained-Si and SiGe, the compositional fluctuation in SiGe was found to be the origin of the strain fluctuation.
| Original language | English |
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| Pages | 1179-1187 |
| Number of pages | 9 |
| Publication status | Published - 2004 |
| Event | SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8 |
Conference
| Conference | SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium |
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| Country/Territory | United States |
| City | Honolulu, HI |
| Period | 04/10/3 → 04/10/8 |