Thin films of TiO2 anatase structure were heteroepitaxially grown on SrTiO3(001) single crystalline substrates by direct current magnetron sputtering (DCSP) and metalorganic chemical vapor deposition (MOCVD). The DCSP-grown films always showed larger lattice constants than those of the MOCVD-grown films. The RBS measurements revealed a difference in the depth profiles of the misfit dislocations in the films, which was considered to be the origin of the larger lattice constants in the DCSP-grown films. A striking difference was also present in the photoluminescence characteristics in MOCVD-grown films and DCSP-grown films; the photoluminescence peak originating from the self- trapping excitons observed in MOCVD-films disappeared in DCSP-films.
- Rutherford backscattering spectroscopy
- Titanium oxide