Comparative Study of TiO2 Anatase Epitaxial Thin Films Grown by Magnetron Sputtering and Metalorganic Chemical Vapor Deposition

Masayuki Kamei; Takahira Miyagi; Tomoyuki Ogawa; Takefumi Mitsuhashi; Atsushi Yamazaki; Tetsuya Sato

doi:10.1143/jjap.42.7025

Comparative Study of TiO₂ Anatase Epitaxial Thin Films Grown by Magnetron Sputtering and Metalorganic Chemical Vapor Deposition

Masayuki Kamei, Takahira Miyagi, Tomoyuki Ogawa, Takefumi Mitsuhashi, Atsushi Yamazaki, Tetsuya Sato

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Thin films of TiO₂ anatase structure were heteroepitaxially grown on SrTiO₃(001) single crystalline substrates by direct current magnetron sputtering (DCSP) and metalorganic chemical vapor deposition (MOCVD). The DCSP-grown films always showed larger lattice constants than those of the MOCVD-grown films. The RBS measurements revealed a difference in the depth profiles of the misfit dislocations in the films, which was considered to be the origin of the larger lattice constants in the DCSP-grown films. A striking difference was also present in the photoluminescence characteristics in MOCVD-grown films and DCSP-grown films; the photoluminescence peak originating from the self- trapping excitons observed in MOCVD-films disappeared in DCSP-films.

Original language	English
Pages (from-to)	7025-7028
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	11
DOIs	https://doi.org/10.1143/jjap.42.7025
Publication status	Published - 2003 Nov

Keywords

CVD
Epitaxy
Rutherford backscattering spectroscopy
Sputtering
Titanium oxide

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10.1143/jjap.42.7025

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title = "Comparative Study of TiO2 Anatase Epitaxial Thin Films Grown by Magnetron Sputtering and Metalorganic Chemical Vapor Deposition",

abstract = "Thin films of TiO2 anatase structure were heteroepitaxially grown on SrTiO3(001) single crystalline substrates by direct current magnetron sputtering (DCSP) and metalorganic chemical vapor deposition (MOCVD). The DCSP-grown films always showed larger lattice constants than those of the MOCVD-grown films. The RBS measurements revealed a difference in the depth profiles of the misfit dislocations in the films, which was considered to be the origin of the larger lattice constants in the DCSP-grown films. A striking difference was also present in the photoluminescence characteristics in MOCVD-grown films and DCSP-grown films; the photoluminescence peak originating from the self- trapping excitons observed in MOCVD-films disappeared in DCSP-films.",

keywords = "CVD, Epitaxy, Rutherford backscattering spectroscopy, Sputtering, Titanium oxide",

author = "Masayuki Kamei and Takahira Miyagi and Tomoyuki Ogawa and Takefumi Mitsuhashi and Atsushi Yamazaki and Tetsuya Sato",

year = "2003",

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T1 - Comparative Study of TiO2 Anatase Epitaxial Thin Films Grown by Magnetron Sputtering and Metalorganic Chemical Vapor Deposition

AU - Kamei, Masayuki

AU - Miyagi, Takahira

AU - Ogawa, Tomoyuki

AU - Mitsuhashi, Takefumi

AU - Yamazaki, Atsushi

AU - Sato, Tetsuya

PY - 2003/11

Y1 - 2003/11

N2 - Thin films of TiO2 anatase structure were heteroepitaxially grown on SrTiO3(001) single crystalline substrates by direct current magnetron sputtering (DCSP) and metalorganic chemical vapor deposition (MOCVD). The DCSP-grown films always showed larger lattice constants than those of the MOCVD-grown films. The RBS measurements revealed a difference in the depth profiles of the misfit dislocations in the films, which was considered to be the origin of the larger lattice constants in the DCSP-grown films. A striking difference was also present in the photoluminescence characteristics in MOCVD-grown films and DCSP-grown films; the photoluminescence peak originating from the self- trapping excitons observed in MOCVD-films disappeared in DCSP-films.

AB - Thin films of TiO2 anatase structure were heteroepitaxially grown on SrTiO3(001) single crystalline substrates by direct current magnetron sputtering (DCSP) and metalorganic chemical vapor deposition (MOCVD). The DCSP-grown films always showed larger lattice constants than those of the MOCVD-grown films. The RBS measurements revealed a difference in the depth profiles of the misfit dislocations in the films, which was considered to be the origin of the larger lattice constants in the DCSP-grown films. A striking difference was also present in the photoluminescence characteristics in MOCVD-grown films and DCSP-grown films; the photoluminescence peak originating from the self- trapping excitons observed in MOCVD-films disappeared in DCSP-films.

KW - CVD

KW - Epitaxy

KW - Rutherford backscattering spectroscopy

KW - Sputtering

KW - Titanium oxide

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11

ER -

Comparative Study of TiO₂ Anatase Epitaxial Thin Films Grown by Magnetron Sputtering and Metalorganic Chemical Vapor Deposition

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Keywords

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