Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories

Y. X. Liu; T. Kamei; T. Matsukawa; Kazuhiko Endo; S. O'uchi; J. Tsukada; H. Yamauchi; Y. Ishikawa; T. Hayashida; K. Sakamoto; A. Ogura; M. Masahara

doi:10.1109/SNW.2012.6243318

Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories

Y. X. Liu, T. Kamei, T. Matsukawa, Kazuhiko Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura, M. Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The tri-gate (TG)- and double-gate (DG)-type poly-Si fin-channel split-gate flash memories with a thin n ⁺-poly-Si floating-gate (FG) have successfully been fabricated, and their electrical characteristics including the variations of threshold voltage (Vt) and S-slope have been comparatively investigated. It was experimentally found that better short-channel effect (SCE) immunity, smaller V _t variations, and a higher program speed are obtained in the TG-type flash memories than in the DG-type memories. Moreover, it was also confirmed that over-erase is effectively suppressed by split-gate structure.

Original language	English
Title of host publication	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs	https://doi.org/10.1109/SNW.2012.6243318
Publication status	Published - 2012 Oct 12
Externally published	Yes
Event	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States Duration: 2012 Jun 10 → 2012 Jun 11

Publication series

Name	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Other

Other	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
Country/Territory	United States
City	Honolulu, HI
Period	12/6/10 → 12/6/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/SNW.2012.6243318

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Liu, Y. X., Kamei, T., Matsukawa, T., Endo, K., O'uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Hayashida, T., Sakamoto, K., Ogura, A., & Masahara, M. (2012). Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories. In 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 [6243318] (2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012). https://doi.org/10.1109/SNW.2012.6243318

Liu, YX, Kamei, T, Matsukawa, T, Endo, K, O'uchi, S, Tsukada, J, Yamauchi, H, Ishikawa, Y, Hayashida, T, Sakamoto, K, Ogura, A & Masahara, M 2012, Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories. in 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012., 6243318, 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012, 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012, Honolulu, HI, United States, 12/6/10. https://doi.org/10.1109/SNW.2012.6243318

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abstract = "The tri-gate (TG)- and double-gate (DG)-type poly-Si fin-channel split-gate flash memories with a thin n +-poly-Si floating-gate (FG) have successfully been fabricated, and their electrical characteristics including the variations of threshold voltage (Vt) and S-slope have been comparatively investigated. It was experimentally found that better short-channel effect (SCE) immunity, smaller V t variations, and a higher program speed are obtained in the TG-type flash memories than in the DG-type memories. Moreover, it was also confirmed that over-erase is effectively suppressed by split-gate structure.",

author = "Liu, {Y. X.} and T. Kamei and T. Matsukawa and Kazuhiko Endo and S. O'uchi and J. Tsukada and H. Yamauchi and Y. Ishikawa and T. Hayashida and K. Sakamoto and A. Ogura and M. Masahara",

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doi = "10.1109/SNW.2012.6243318",

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AU - Liu, Y. X.

AU - Kamei, T.

AU - Matsukawa, T.

AU - Endo, Kazuhiko

AU - O'uchi, S.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Ishikawa, Y.

AU - Hayashida, T.

AU - Sakamoto, K.

AU - Ogura, A.

AU - Masahara, M.

PY - 2012/10/12

Y1 - 2012/10/12

N2 - The tri-gate (TG)- and double-gate (DG)-type poly-Si fin-channel split-gate flash memories with a thin n +-poly-Si floating-gate (FG) have successfully been fabricated, and their electrical characteristics including the variations of threshold voltage (Vt) and S-slope have been comparatively investigated. It was experimentally found that better short-channel effect (SCE) immunity, smaller V t variations, and a higher program speed are obtained in the TG-type flash memories than in the DG-type memories. Moreover, it was also confirmed that over-erase is effectively suppressed by split-gate structure.

AB - The tri-gate (TG)- and double-gate (DG)-type poly-Si fin-channel split-gate flash memories with a thin n +-poly-Si floating-gate (FG) have successfully been fabricated, and their electrical characteristics including the variations of threshold voltage (Vt) and S-slope have been comparatively investigated. It was experimentally found that better short-channel effect (SCE) immunity, smaller V t variations, and a higher program speed are obtained in the TG-type flash memories than in the DG-type memories. Moreover, it was also confirmed that over-erase is effectively suppressed by split-gate structure.

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Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories

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